B772SO [JCST]
暂无描述;
| 型号： | B772SO |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | 暂无描述 晶体 晶体管 |
| 文件： | 总1页 (文件大小：31K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89 Plastic-Encapsulate Transistors
SOT-89
B772 TRANSISTOR (PNP)
1. BASE
FEATURES
Power dissipation
2. COLLETOR
3. EMITTER
1
PCM:
500
mW (Tamb=25℃)
2
3
Collector current
ICM:
-3
A
V
Collector-base voltage
V(BR)CBO:
-40
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
CLASSIFICATION OF hFE(1)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
Ic=-100µA , IE=0
IC= -10 mA , IB=0
IE= -100 µA, IC=0
VCB= -40 V, IE=0
VCE=-30 V, IB=0
VEB=-6V, IC=0
MIN
-40
-30
-6
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
-1
-10
-1
µA
µA
µA
ICEO
Collector cut-off current
IEBO
Emitter cut-off current
hFE(1)
VCE= -2V, IC= -1A
VCE=-2V, IC= -100mA
IC=-2A, IB= -0.2A
IC=-2A, IB= -0.2A
60
32
400
DC current gain
hFE(2)
VCE(sat)
VBE(sat)
-0.5
-1.5
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE= -5V, C=-0.1A
50
MHz
Transition frequency
f T
f = 10MHz
CLASSIFICATION OF hFE
(1)
Rank
R
O
Y
GR
60-120
100-200
160-320
200-400
Range
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