C1815LT1-SOT-23 [JCST]
TRANSISTOR（ NPN ）; 晶体管（ NPN ）
| 型号： | C1815LT1-SOT-23 |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | TRANSISTOR（ NPN ） |
| 文件： | 总2页 (文件大小：128K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
SOT— 23
1. BASE
C1815LT1
TRANSISTOR（ NPN ）
2. EMITTER
3. COLLECTOR
FEATURES
Power dissipation
PCM
:
0.2
W（Tamb=25℃）
Collector current
ICM:
2.4
1.3
0.15
A
Collector-base voltage
V(BR)CBO : 60
V
Operating and storage junction temperature range
TJ，Tstg: -55℃ to +150
Unit : mm
ELECTRICAL CHARACTERISTICS（Tamb=25℃
otherwise specified）
unless
Parameter
Symbol
Test
conditions
MIN
60
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cut-off current
V
(BR)CBO
Ic= 100μA， IE=0
Ic= 0.1mA， IB=0
V
50
V
(BR)CEO
ICBO
ICEO
VCB=60 V , IE=0
0.1
0.1
0.1
400
0.25
1
μA
μA
μA
Collector cut-off current
VCE=50 V , IB=0
Emitter cut-off current
IEBO
VEB= 5V , IC=0
DC current gain
hFE(1)
VCE= 6V, IC= 2mA
IC=100 mA, IB= 10mA
IC=100 mA, IB= 10mA
130
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat)
VBE(sat)
V
V
VCE=10V, I = 1mA
C
Transition frequency
80
MHz
fT
f=30MHz
CLASSIFICATION OF hFE(1)
Rank
L
H
Range
130-200
200-400
DEVICE MARKING : C1815LT1=HF
SOT-23 PACKAGE OUTLINE DIMENSIONS
D
b
0.2
e
C
e1
Dimensions In Millimeters
Symbol
Dimensions In Inches
Min
Max
Min
Max
A
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
1.100
0.100
1.000
0.500
0.150
3.000
1.400
2.550
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
0.043
0.004
0.039
0.020
0.006
0.118
0.055
0.100
A1
A2
b
c
D
E
E1
e
0.950TPY
0.550REF
0.037TPY
0.022REF
e1
L
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
8°
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