CESD5V0J4 [JCST]

Transient Suppressor,;
CESD5V0J4
型号: CESD5V0J4
厂家: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD    JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
描述:

Transient Suppressor,

文件: 总1页 (文件大小:3319K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD  
SOT-353 Plastic-Encapsulate Diodes  
CESD5V0J4 ESD Protection Diode  
SOT-353  
DESCRIPTION  
The CESD5V0J4 is designed to protect voltage sensitive  
components from ESD. Excellent clamping capability, low leakage,  
and fast response time provide best in class protection on designs that  
are exposed to ESD. Because of its small size, it is suited for use in  
cellular phones, MP3 players, digital cameras and many other portable  
applications where board space is at a premium.  
5
4
3
1
2
FEATURES  
z
z
z
z
z
Low Leakage  
Response Time is Typically < 1 ns  
ESD Rating of Class 3 (> 16 kV) Per Human Body Model  
IEC6100042 Level 4 ESD Protection  
These are PbFree Devices  
Maximum Ratings @Ta=25  
Parameter  
Symbol  
Limit  
Unit  
IEC6100042(ESD)  
ESD Voltage  
Air  
Contact  
15  
15  
16  
KV  
Per Human Body Model  
Per Machine Model  
KV  
V
400  
Peak Power Dissipation @ 8 X 20 ms @TA 25°C (Note 1)  
Steady State Power -- 1 Diode (Note 2)  
Ppk  
PD  
100  
200  
W
mW  
/W  
Thermal Resistance JunctiontoAmbient  
RΘJA  
TL  
625  
Lead Solder Temperature Maximum (10 Second Duration)  
Junction and Storage Temperature Range  
260  
Tj, Tstg  
-55 ~ +150  
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only.  
Functional operation above the recommended. Operating conditions is not implied. Extended exposure to  
stresses above the recommended operating conditions may affect device reliability.  
1. FR5 = 1.0 x 0.75 x 0.62 in.  
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10mA for all types)  
IR (μA)  
@ VRWM  
Max  
V
BR (V)  
VF (V)  
@IF=200mA  
Max  
VC (V)  
@Max IPP=5A  
Max  
Device  
VRWM (V)  
IT  
C (pF)  
Device  
@ IT  
Marking  
Max  
Min  
Max  
mA  
MAX  
CESD5V0J4  
12  
5.0  
5
6.0  
7.2  
1.0  
1.25  
12.5  
35  
1. Non--repetitive current per Figure 1. Derate per Figure 2.  
2. Only 1 diode under power. For all 4 diodes under power, PD will be 25%. Mounted on FR--4 board with min pad.  
A,May,2011  

相关型号:

CESD5V0L4

Transient Suppressor,
JCST

CESD7V0D7

Transient Suppressor,
JCST

CESE1-9.000MHZ

Series - Fundamental Quartz Crystal, 9MHz Nom, HC49/US, SMD, 2 PIN
CALIBER

CESEM0J103

CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 6.3V, 10000uF, THROUGH HOLE MOUNT, RADIAL LEADED
CHEMI-CON

CESEM0J153

CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 6.3V, 15000uF, THROUGH HOLE MOUNT, RADIAL LEADED
CHEMI-CON

CESEM0J221

CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 6.3V, 220uF, THROUGH HOLE MOUNT, RADIAL LEADED
CHEMI-CON

CESEM0J222

CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 6.3V, 2200uF, THROUGH HOLE MOUNT, RADIAL LEADED
CHEMI-CON

CESEM0J472

CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 6.3V, 4700uF, THROUGH HOLE MOUNT, RADIAL LEADED
CHEMI-CON

CESEM0J682

CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 6.3V, 6800uF, THROUGH HOLE MOUNT, RADIAL LEADED
CHEMI-CON

CESEM1A101

CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 10V, 100uF, THROUGH HOLE MOUNT, RADIAL LEADED
CHEMI-CON

CESEM1A331

CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 10V, 330uF, THROUGH HOLE MOUNT, RADIAL LEADED
CHEMI-CON

CESEM1H010

CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 50V, 1uF, THROUGH HOLE MOUNT, RADIAL LEADED
CHEMI-CON