CJ2301 [JCST]
Transistor;
| 型号： | CJ2301 |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总3页 (文件大小：587K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ2301 P-Channel 20-V(D-S) MOSFET
SOT-23
FEATURE
TrenchFET Power MOSFET
1. GATE
2. SOURCE
3. DRAIN
APPLICATIONS
z
z
Load Switch for Portable Devices
DC/DC Converter
MARKING: S1
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Symbol
Value
Unit
VDS
VGS
ID
-20
±8
V
Gate-Source Voltage
-2.3
Continuous Drain Current
Pulsed Drain Current
A
IDM
IS
-10
Continuous Source-Drain Diode Current
Maximum Power Dissipation
-0.72
0.35
357
PD
R
W
Thermal Resistance from Junction to Ambient(t ≤5s)
Junction Temperature
JA
θ
℃/W
TJ
150
℃
Storage Temperature
Tstg
-55 ~+150
A,Dec,2010
Electrical characteristics (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID =-250µA
VDS =VGS, ID =-250µA
VDS =0V, VGS =±8V
VDS =-20V, VGS =0V
VGS =-4.5V, ID =-2.8A
VGS =-2.5V, ID =-2.0A
VDS =-5V, ID =-2.8A
-20
V
-0.4
-1
±100
-1
nA
µA
IDSS
0.090
0.110
6.5
0.112
0.142
Drain-source on-state resistance a
RDS(on)
Ω
a
Forward transconductance
gfs
S
Dynamicb
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
405
75
VDS =-10V,VGS =0V,f =1MHz
VDS =-10V,VGS =-4.5V,ID =-3A
VDS =-10V,VGS =-2.5V,ID =-3A
f =1MHz
pF
55
5.5
3.3
0.7
1.3
6.0
11
10
6
Total gate charge
Qg
nC
Ω
Gate-source charge
Gate-drain charge
Gate resistance
Turn-on delay time
Rise time
Qgs
Qgd
Rg
td(on)
tr
20
60
50
20
V
DD=-10V,
RL=10ꢀ, ID =-1A,
GEN=-4.5V,Rg=1ꢀ
35
ns
Turn-off delay time
Fall time
td(off)
tf
30
V
10
Drain-source body diode characteristics
Continuous source-drain diode current
IS
-1.3
TC=25℃
A
V
a
-10
Pulse diode forward current
ISM
-1.2
Body diode voltage
VSD
IS=-0.7A
-0.8
Notes :
a.Pulse Test : Pulse Width < 300µs, Duty Cycle ≤2%.
b.Guaranteed by design, not subject to production testing.
A,Dec,2010
Typical Characteristics
CJ2301
Output Characteristics
Transfer Characteristics
-14
-12
-10
-8
-10
VGS= -4.0V,-3.5V,-3.0V,-2.5V
Ta=25℃
Ta=25℃
Pulsed
Pulsed
VGS=-2.0V
-8
-6
-4
-2
-0
-6
VGS=-1.5V
-4
-2
VGS=-1.0V
-0
-0
-1
-2
-3
-4
-0.0
-0.5
-1.0
-1.5
-2.0
-2.5
DRAIN TO SOURCE VOLTAGE VDS (V)
GATE TO SOURCE VOLTAGE VGS (V)
RDS(ON) —— ID
RDS(ON) —— VGS
150
120
90
60
30
0
250
200
150
100
50
Ta=25℃
Ta=25℃
Pulsed
Pulsed
VGS=-2.5V
VGS=-4.5V
ID=-3.6A
0
-0
-2
-4
-6
-8
-10
-0
-2
-4
-6
-8
DRAIN CURRENT ID (A)
GATE TO SOURCE VOLTAGE VGS (V)
IS —— VSD
-1
Ta=25℃
Pulsed
-0.3
-0.1
-0.03
-0.01
-3E-3
-1E-3
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
SOURCE TO DRAIN VOLTAGE VSD (V)
A,Dec,2010
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