D882-TO-251 [JCST]
TRANSISTOR(NPN); 晶体管( NPN )型号: | D882-TO-251 |
厂家: | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
描述: | TRANSISTOR(NPN) |
文件: | 总3页 (文件大小:1014K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251 Plastic-Encapsulate Transistors
D882 TRANSISTOR(NPN)
TO— 251
FEATURES
1.BASE
Power dissipation
PCM 1.25W(Tamb=25℃)
Collector current
ICM: 3A
2.COLLECTOR
3.EMITTER
:
Collector-base voltage
1
2
3
V(BR)CBO : 40V
Operating and storage junction temperature range
TJ,Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS(Tamb=25℃
unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
MIN
40
30
6
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Ic= 100μA, IE=0
Ic= 10 mA, IB=0
IE= 100μA, IC=0
VCB= 40 V, IE=0
VCE= 30 V, IB=0
VEB= 6 V, IC=0
V
V
1
10
1
µA
µA
µA
Collector cut-off current
ICEO
Emitter cut-off current
IEBO
hFE(1)
hFE(2)
VCE (sat)
VBE (sat)
VCE= 2 V, IC= 1A
VCE= 2 V, IC= 100mA
IC= 2A, IB= 0.2 A
IC= 2A, IB= 0.2 A
60
32
400
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
0.5
1.5
V
V
VCE= 5V, Ic=0.1A
f =10MHz
Transition frequency
fT
50
MHz
CLASSIFICATION OF hFE(1)
Rank
R
O
Y
GR
200-400
Range
60-120
100-200
160-320
TO-251 PACKAGE OUTLINE DIMENSIONS
D
A
D1
C1
b1
b
e
A1
C
e1
Dimensions In Millimeters
Symbol
Dimensions In Inches
Min
Max
Min
Max
A
2.200
1.020
1.350
0.500
0.700
0.430
0.430
6.350
5.200
5.400
2.400
1.270
1.650
0.700
0.900
0.580
0.580
6.650
5.400
5.700
0.087
0.040
0.053
0.020
0.028
0.017
0.017
0.250
0.205
0.213
0.094
0.050
0.065
0.028
0.035
0.023
0.023
0.262
0.213
0.224
A1
B
b
b1
c
c1
D
D1
E
2.300TYP
0.091TYP
e
e1
L
4.500
7.500
4.700
7.900
0.177
0.295
0.185
0.311
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