D882GR(TO-126) [JCST]
Transistor,;
| 型号： | D882GR(TO-126) |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor, |
| 文件： | 总1页 (文件大小：278K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
TO-126
D882 TRANSISTOR (NPN)
FEATURES
Power Dissipation
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
40
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
30
V
6
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
3
A
PD
1.25
150
-55-150
W
℃
℃
TJ
Tstg
Storage Temperature
ELECTRICAL CHARACTERISTICS ( Ta=25
unless otherwise specified)
℃
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IC = 100μA, IE=0
IC = 10mA, IB=0
IE= 100μA, IC=0
VCB= 40 V, IE=0
VCE= 30 V, IB=0
VEB= 6 V, IC=0
40
30
5
V
V
V
1
10
1
µA
µA
µA
Collector cut-off current
ICEO
Emitter cut-off current
IEBO
DC current gain
hFE
VCE= 2 V, IC= 1A
IC= 2A, IB= 0.2 A
IC= 2A, IB= 0.2 A
60
400
0.5
1.5
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE (sat)
VBE (sat)
V
V
V
CE= 5V, IC=0.1A
Transition frequency
fT
90
MHz
f =10MHz
CLASSIFICATION OF hFE
Rank
R
O
Y
GR
200-400
Range
60-120
100-200
160-320
A,Jun,2011
相关型号：
D882GR-BP
Power Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC, TO-126, 3 PIN
MCC
D882O
Power Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC, TO-126, 3 PIN
MCC
D882O-BP
Power Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC, TO-126, 3 PIN
MCC
©2020 ICPDF网 联系我们和版权申明