D965 [JCST]
TRANSISTOR（ NPN ）; 晶体管（ NPN ）
| 型号： | D965 |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | TRANSISTOR（ NPN ） |
| 文件： | 总3页 (文件大小：527K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
TO-92 Plastic-Encapsulate Transistors
TO— 92
D965 TRANSISTOR（ NPN ）
FEATURES
1.EMITTER
2. COLLECTOR
3. BASE
Power dissipation
PCM : 0.75
Collector current
ICM
W（Tamb=25℃）
:
5
A
V
1 2 3
Collector-base voltage
V(BR)CBO : 42
Operating and storage junction temperature range
TJ，Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS（Tamb=25℃
unless otherwise specified）
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
Ic=1mA， IE=0
Ic= mA， IB=0
conditions
MIN
42
22
6
TYP
MAX
UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
V
1
IE= 10 μA， IC=0
VCB= 30 V , IE=0
0.1
0.1
μA
μA
Emitter cut-off current
IEBO
VEB= 6 V， IC=0
VCE= 2 V, IC= 0.15
mA
HFE（1）
HFE（2）
HFE（3）
VCE(sat)
150
340
150
DC current gain
VCE= 2V, IC = 500 mA
950
VCE= 2V,
mA
IC = 2000
Collector-emitter saturation voltage
IC=3000mA,IB=100 mA
0.35
V
CLASSIFICATION OF H
FE(2)
Rank
R
T
Range
340-600
560-950
TO-92 PACKAGE OUTLINE DIMENSIONS
D1
D
b
φ
e
e1
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
Min
Max
3.300
1.100
0.380
0.360
4.400
3.430
4.300
3.700
1.400
0.550
0.510
4.700
0.130
0.043
0.015
0.014
0.173
0.135
0.169
0.146
0.055
0.022
0.020
0.185
A
A1
b
c
D
D1
E
4.700
0.185
1.270TYP
0.050TYP
e
2.440
2.640
14.500
1.600
0.380
0.096
0.555
0.104
0.571
0.063
0.015
e1
L
14.100
Ö
0.000
0.000
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