EMB4 [JCST]
Small Signal Bipolar Transistor;
| 型号： | EMB4 |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Small Signal Bipolar Transistor |
| 文件： | 总1页 (文件大小：89K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-563 Plastic-Encapsulate Transistors
EMB4 General purpose transistors (dual digital transistors)
FEATURES
SOT-563
z
Two DTA114T chips in a package
1
Marking: B4
Equivalent circuit
(3)
(2)
(1)
R
1
R1
(4)
(5)
(6)
Absolute maximum ratings (Ta=25℃)
Symbol
Parameter
Value
-50
Units
V
VCBO
VCEO
VEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
-50
V
-5
V
-100
150
mA
mW
℃
PC
Collector Power Dissipation
Junction Temperature
Storage Temperature
TJ
150
Tstg
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
-50
-50
-5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V(BR)CBO IC=-50μA, IE=0
V(BR)CEO IC=-1mA, IB=0
V(BR)EBO IE=-50μA, IC=0
V
V
ICBO
IEBO
hFE
VCB=-50V, IE=0
VEB=-4V, IC=0
-0.5
-0.5
600
-0.3
μA
μA
DC current gain
VCE=-5V, IC=-1mA
IC=-10mA, IB=-1mA
VCE=-10V, IC=-5mA, f=100MHz
-
100
Collector-emitter saturation voltage
Transition frequency
VCE(sat)
fT
V
MHz
Ω
250
Intput resistance
R1
7
13
A,Dec,2010
相关型号：
EMB4T2R
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, ROHS COMPLIANT, EMT6, 6 PIN
ROHM
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