EMB60 [ROHM]

EMT6封装中内置2个DTA023J。;
EMB60
型号: EMB60
厂家: ROHM    ROHM
描述:

EMT6封装中内置2个DTA023J。

文件: 总6页 (文件大小:694K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
EMB60  
Datasheet  
Complex Digital Transistors (Bias Resistor Built-in Transistors)  
llOutline  
Parameter  
DTr1 and DTr2  
-50V  
EMT6  
V
CC  
I
-100mA  
2.2kΩ  
47kΩ  
C(MAX.)  
R
1
EMB60  
R
2
(SC-107C)  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
ꢀ ꢀ ꢀ  
llFeatures  
llInner circuit  
1) Two DTA023J chips in a EMT6 package.  
2) Transister elements are independent, eliminating  
interface.  
3) Mounting cost and area can be cut in half.  
4) Lead Free/RoHS Compliant.  
llApplication  
Switching circuit, Inverter circuit, Interface circuit,  
Driver circuit  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
llPackaging specifications  
Basic  
Package  
size  
Taping  
code  
Reel size Tape width  
Part No.  
Package  
ordering  
Marking  
(mm)  
(mm)  
unit.(pcs)  
EMB60  
EMT6  
1616  
T2R  
180  
8
8000  
B60  
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www.rohm.com  
© 2013 ROHMCo., Ltd. All rights reserved.  
1/5  
20131001 - Rev.003  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
EMB60  
Datasheet  
llAbsolute maximum ratings (Ta = 25°C)  
<For DTr1 and DTr2 in common>  
Parameter  
Symbol  
VCC  
VIN  
Values  
-50  
Unit  
V
Supply voltage  
Input voltage  
-12 to 5  
-100  
V
IO  
Output current  
mA  
mA  
mW  
*1  
IC(MAX)  
Collector current  
Power dissipation  
Junction temperature  
Range of storage temperature  
-100  
*2 *3  
PD  
150(Total)  
150  
Tj  
Tstg  
-55 to +150  
llElectrical characteristics (Ta = 25°C)  
<For DTr1 and DTr2 in common>  
Values  
Parameter  
Symbol  
Conditions  
= -5V, I = -0.1mA  
Unit  
V
Min.  
Typ.  
Max.  
-0.5  
-
VI(off)  
VI(on)  
VO(on)  
II  
V
-
-1.1  
-
-
-
CC  
O
Input voltage  
V = -0.3V, I = -5mA  
O
O
Output voltage  
Input current  
I / I = -5mA / -0.5mA  
-0.07 -0.15  
V
mA  
μA  
-
O
I
V = -5V  
-
-
-
-3.6  
-0.5  
-
I
IO(off)  
GI  
Output current  
DC current gain  
Input resistance  
Resistance ratio  
V
CC  
= -50V, V = 0V  
-
I
V = -10V, I = -5mA  
80  
1.54  
17  
-
O
O
R1  
-
2.2  
21  
2.86  
26  
kΩ  
-
R2/R1  
-
V
= -10V, I = 5mA,  
E
CE  
*1  
fT  
Transition frequency  
-
250  
-
MHz  
f = 100MHz  
*1 Characteristics of built-in transistor.  
*2 terminal mounted on a reference footprint.  
*3 120mW per element must not be exceeded.  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀꢀ ꢀ ꢀ ꢀ  
ꢀꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
www.rohm.com  
© 2013 ROHMCo., Ltd. All rights reserved.  
2/5  
20131001 - Rev.003  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
EMB60  
Datasheet  
llElectrical characteristic curves(Ta=25)  
Fig.1 Input voltage vs. output current  
(ON characteristics)  
Fig.2 Output current vs. input voltage  
(OFF characteristics)  
Fig.3 Output current vs. output voltage  
Fig.4 DC current gain vs. output current  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
www.rohm.com  
© 2012 ROHMCo., Ltd. All rights reserved.  
3/5  
20131001 - Rev.003  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
EMB60  
Datasheet  
llElectrical characteristic curves(T =25°C)  
a
<For DTr1 and Tr2 in common>  
Fig.5 Output voltage vs. output current  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
www.rohm.com  
© 2013 ROHMCo., Ltd. All rights reserved.  
4/5  
20131001 - Rev.003  
EMB60  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
Datasheet  
llDimensions  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
www.rohm.com  
© 2013 ROHMCo., Ltd. All rights reserved.  
5/5  
20131001 - Rev.003  

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