FMMBD4448HTW [JCST]
SURFACE MOUNT SWITCHING DIODE ARRAYS; 表面贴装开关二极管阵列
| 型号： | FMMBD4448HTW |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | SURFACE MOUNT SWITCHING DIODE ARRAYS |
| 文件： | 总4页 (文件大小：175K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-06C Plastic-Encapsulate Diode
FMMBD4448HTW
SURFACE MOUNT SWITCHING DIODE ARRAYS
WBFBP-06C
(2×2×0.5)
unit: mm
DESCRIPTION
Silicon epitaxial planar
Switching Diode
FEATURES
z
z
z
Ultra-Small Surface Mount Package
Fast Switching Speed
High Conductance
1
APPLICATION
For General Purpose Switching Applications, rectifiers
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
FMMBD4448HTW
Marking:KAA
Maximum Ratings and Electrical Characteristics, Single Diode @TA=25
Parameter
Symbol
Limits
Unit
Non-Repetitive Peak reverse voltage
VRM
100
V
Peak Repetitive peak reverse voltage
Working Peak Reverse Voltage
VRRM
VRWM
VR
80
V
DC Blocking
Voltage
RMS Reverse Voltage
VR(RMS)
IFM
57
V
Forward Continuous Current
Average Rectified Output Current
500
250
4.0
mA
mA
IO
Non-Repetitive Peak forward surge current @=1.0µs
@=1.0s
IFSM
A
2.0
Power Dissipation
Pd
RθJA
TJ
150
625
mW
℃/W
℃
Thermal Resistance Junction to Ambient
Junction temperature
150
Storage temperature range
TSTG
-65 to +150
℃
Electrical Ratings @TA=25℃
Parameter
Symbol
VR
Min.
80
0.62
Typ.
Max. Unit
Conditions
IR=100μA
IF=5mA
Reverse Breakdown Voltage
V
VF1
VF2
VF3
VF4
IR1
0.72
0.855
1.0
1.25
0.1
25
V
V
IF=10mA
Forward voltage
V
IF=100mA
IF=150mA
VR=70V
V
µA
nA
pF
ns
Reverse current
IR2
VR=20V
Capacitance between terminals
Reverse Recovery Time
CT
3.5
4
VR=6V,f=1MHz
VR=6V,IF=5mA
trr
Typical Characteristics
APPLICATION CIRCUITS
Bridge rectifiers
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