FUMF21N [JCST]
TRANSISTOR; 晶体管
| 型号： | FUMF21N |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | TRANSISTOR |
| 文件： | 总6页 (文件大小：295K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-06C Power management Dual-transistors
FUMF21N TRANSISTOR
WBFBP-06C
(2×2×0.5)
unit: mm
DESCRIPTION
Silicon epitaxial planar transistor
FEATURES
1
z
2SA2018 and DTC114E are housed independently
in a package.
z
z
Power switching circuit in a single package.
Mounting cost and area can be cut in half.
APPLICATION
Power management circuit, mobile telephone quiver circuit
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING:F21
F21
TR1 MAXIMUM RATINGS TA=25℃ unless otherwise noted
Symbol
VCBO
Parameter
Collector- Base Voltage
Value
-15
Units
V
VCEO
VEBO
IC
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
-12
V
-6
V
-0.5
0.15
150
A
PC
W
℃
℃
TJ
Junction Temperature
Storage Temperature
Tstg
-55-150
DTR2 Absolute maximum ratings(Ta=25℃)
Parameter
Supply voltage
Input voltage
Symbol
VCC
VIN
Limits
Unit
V
50
-10~40
50
V
IO
Output current
mA
IC(MAX)
Pd
100
Power dissipation
Junction temperature
Storage temperature
150
mW
℃
Tj
150
Tstg
-55~150
℃
TR1 ELECTRICAL CHARACTERISTICS (Tamb=25℃
unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
MIN
-15
-12
-6
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC=-10µA, IE=0
IC=-1mA, IB=0
IE=-10µA, IC=0
V
V
VCB= -15 V, IE=0
-0.1
-0.1
µA
µA
Emitter cut-off current
IEBO
VEB=- 6V, IC=0
DC current gain
hFE
VCE=-2V, IC=-10mA
IC=-200mA,IB=-10mA
VCE=-2V,IC=-10mA, f=100MHz
VCB=-10V,IE=0,f=1MHz
270
680
Collector-emitter saturation voltage
Transition frequency
VCE(sat)
-0.25
V
260
6.5
MHz
pF
fT
Collector output capacitance
Cob
DTR2 Electrical characteristics (Ta=25℃)
Min.
Typ
Max.
Unit
V
Conditions
VCC=5V ,IO=100µA
VO=0.3V ,IO=10 mA
IO/II=10mA/0.5mA
VI=5V
Parameter
Symbol
VI(off)
VI(on)
VO(on)
II
0.5
Input voltage
3
Output voltage
Input current
0.3
0.88
0.5
V
mA
µA
Output current
IO(off)
GI
VCC=50V, VI=0
VO=5V ,IO=5mA
DC current gain
Input resistance
Resistance ratio
Transition frequency
30
7
R1
10
1
13
KΩ
R2/R1
fT
0.8
1.2
250
MHz
VCE=10V ,IE=-5mA,f=100MHz
Typical Characteristics
TR1
DTR2
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
0.450
0.000
0.150
1.900
1.900
Max.
0.550
0.100
0.250
2.100
2.100
Min.
0.018
0.000
0.006
0.075
0.075
Max.
0.022
0.004
0.010
0.083
0.083
A
A1
b
D
E
D1
E1
e
L
k
0.550 REF.
0.550 REF.
0.650 TYP.
0.400 REF.
0.300 REF.
0.500 REF.
0.022 REF.
0.022 REF.
0.026 TYP.
0.016 REF.
0.012 REF.
0.020 REF.
z
APPLICATION CIRCUITS
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