KSA910O [JCST]
Transistor;
| 型号： | KSA910O |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：113K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92MOD Plastic-Encapsulate Transistors
TO – 92MOD
KSA910 TRANSISTOR (PNP)
1. EMITTER
FEATURES
2. COLLECTOR
3. BASE
z
General Purpose Amplifier Transistor
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Value
-150
-150
-5
Unit
V
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
Collector Current
-50
mA
mW
℃/W
℃
PC
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
800
RθJA
Tj
156
150
Tstg
Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
Min
-150
-150
-5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC= -100µA,IE=0
IC=-5mA,IB=0
V
IE=-10µA,IC=0
V
VCB=-150V,IE=0
VEB=-5V,IC=0
-0.1
-0.1
240
-0.8
5
μA
μA
Emitter cut-off current
IEBO
DC current gain
hFE
VCE=-5V, IC=-10mA
IC=-10mA,IB=-1mA
VCB=-10V,IE=0, f=1MHz
VCE=-30V,IC=-10mA
40
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
VCE(sat)
Cob
V
pF
fT
100
MHz
CLASSIFICATION OF hFE
RANK
R
O
Y
RANGE
40-80
70-140
120-240
A,Dec,2010
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