KSA916 [JCST]
Transistor;
| 型号： | KSA916 |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：254K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
TO-92L
KSA916 TRANSISTOR (PNP)
FEATURES
1. EMITTER
2. COLLECTOR
3. BASE
z
Driver Stage Amplifier
Complement to KSC2316
z
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
-120
-120
-5
Unit
V
VCBO
VCEO
VEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
-800
900
mA
mW
℃
PC
TJ
150
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
-120
-120
-5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO IC =-1mA, IE=0
V(BR)CEO IC =-10mA, IB=0
V(BR)EBO IE=-1mA, IC=0
V
V
ICBO
hFE(1)
hFE(2)
VCE(sat)
fT
VCB=-120V, IE=0
-0.1
µA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-100mA
IC=-500mA, IB=-50mA
VCE=-5V, IC=-100mA
VCB=-10V, IE=0, f=1MHz
60
80
DC current gain
240
Collector-emitter saturation voltage
Transition frequency
-1
V
120
MHz
pF
Collector output capacitance
Cob
40
CLASSIFICATION OF hFE(2)
Rank
O
Y
Range
80-160
120-240
A,Jun,2011
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