KSA916YTA [ONSEMI]
PNP外延硅晶体管;
| 型号： | KSA916YTA |
| 厂家： | 
ONSEMI |
| 描述： | PNP外延硅晶体管 放大器 晶体管 |
| 文件： | 总5页 (文件大小：295K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PNP Epitaxial Silicon
Transistor
KSA916
Features
• Audio Power Amplifier
• Driver Stage Amplifier
• Complement to KSC2316
www.onsemi.com
ABSOLUTE MAXIMUM RATINGS
(Values are at T = 25°C unless otherwise noted.)
A
Symbol
Parameter
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
Value
−120
Unit
V
V
CBO
V
CEO
V
EBO
TO−92 3 LF
CASE 135AM
−120
V
−5
V
MARKING DIAGRAM
I
C
−800
mA
°C
°C
T
J
Junction Temperature
Storage Temperature
150
T
STG
−55 to +150
AA9
16Y
YWW
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1: Emitter
2: Collector
3: Base
THERMAL CHARACTERISTICS
(Values are at T = 25°C unless otherwise noted.) (Note 1)
A
Symbol
Parameter
Power Dissipation, by R
Power Dissipation, by R
Value
900
3
Unit
mW
1
2
3
P
D
θJA
W
θ
JC
A
= Assembly Code
= Device Code
= Date Code
A916Y
YWW
Derate Above 25_C, by R
Derate Above 25_C, by R
Thermal Resistance,
Junction−to−Ambient
7.2
24
mW/°C
mW/°C
°C/W
θ
JA
JC
θ
R
130
θ
JA
JC
ORDERING INFORMATION
R
Thermal Resistance,
Junction−to−Case
41
°C/W
θ
Device
KSA916YTA
Package
Shipping
TO−92 3 LF
(Pb−Free)
2000 /
Fan−Fold
1. PCB size: FR−4, 76 mm × 114 mm × 1.57 mm (3.0 inch × 4.5 inch × 0.062 inch)
with minimum land pattern size.
© Semiconductor Components Industries, LLC, 2002
1
Publication Order Number:
March, 2021 − Rev. 2
KSA916/D
KSA916
ELECTRICAL CHARACTERISTICS
(Values are at T = 25°C unless otherwise noted.)
A
Symbol
Parameter
Collector−Base Breakdown Voltage
Collector−Emitter Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cut−Off Current
Conditions
= −1 mA, I = 0
Min.
−120
−120
−5
−
Typ.
−
Max.
−
Unit
V
BV
BV
BV
I
I
CBO
CEO
EBO
C
E
= −10 mA, I = 0
−
−
V
C
B
I = −1 mA, I = 0
−
−
V
E
C
I
V
= −120 V, I = 0
−
−0.1
−
mA
CBO
CB
CE
CE
E
h
DC Current Gain
V
V
= −5 V, I = −10 mA
60
−
FE1
FE2
C
h
DC Current Gain
= −5 V, I = −100 mA
80
−
240
−1
−
C
V
CE
(sat)
Collector−Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
I
C
= −500 mA, I = −50 mA
−
−
V
B
f
T
V
V
= −5 V, I = −100 mA
−
120
−
MHz
pF
CE
CB
C
C
= −10 V, I = 0, f = 1 MHz
−
40
ob
E
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
hFE CLASSIFICATION
Classification
O
Y
h
FE2
80 ~ 160
120 ~ 240
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2
KSA916
TYPICAL PERFORMANCE CHARACTERISTICS
−1000
−800
−600
−400
−200
0
1000
V
CE
= −5 V
I
B
= −10 mA
I
B
= −15 mA
I
I
= −7 mA
= −5 mA
B
B
100
I
I
= −4 mA
= −3 mA
B
B
I
I
= −2 mA
= −1 mA
B
B
I
B
= 0
10
−1
0
−2
−4
−6
−8
−10
−10
−100
−1000
V
CE
, Collector−Emitter Voltage (V)
I , Collector Current (mA)
C
Figure 1. Static Characteristic
Figure 2. DC Current Gain
−1000
−100
−10
−1
I
C
= 10 I
B
1 s
V
CE
(sat)
−0.1
−0.01
−10
−1
0.0
−0.2
−0.4
−0.6
−0.8
−1.0
−0.1
−1
−10
−100
−1000
I , Collector Current (mA)
C
V
BE
, Base−Emitter Voltage (V)
Figure 3. Collector−Emitter Saturation Voltage
Figure 4. Base−Emitter On Voltage
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Single Pulse
10 ms
−1000
1 ms
100 ms
DC Operating
−100
−10
T
C
= 25°C
T
C
T
A
0
25
50
75
100
125
150
175
−1
−10
−100
T , Ambient Temperature (5C)
A
V
CE
, Collector−Emitter Voltage (V)
Figure 5. Safe Operating Area
Figure 6. Power Derating
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3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−92 3 8.0x4.9 (LEADFORMED)
CASE 135AM
ISSUE B
DATE 14 JAN 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON14058G
TO−92 3 8.0X4.9 (LEADFORMED)
PAGE 1 OF 1
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