KSC2331R [JCST]
暂无描述;
| 型号： | KSC2331R |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | 暂无描述 晶体 晶体管 |
| 文件： | 总1页 (文件大小：21K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
TO-92L
KSC2331 TRANSISTOR NPN
1.EMITTER
FEATURE
2.COLLECTOR
3.BASE
Power dissipation
PCM
Collector current
ICM
:
1
W
A
Tamb=25
:
0.7
Collector-base voltage
V(BR)CBO : 80
V
Operating and storage junction temperature range
TJ Tstg: -55 to +150
ELECTRICAL CHARACTERISTICS Tamb=25
unless otherwise specified
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
Ic= 100 IE=0
IC= 10mA , IB=0
IE= 10 IC=0
VCB=60V , IE=0
VEB=5V , IC=0
MIN
80
60
8
TYP
MAX
UNIT
V
V
V
A
A
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
A
A
0.1
0.1
240
0.7
1.2
IEBO
Emitter cut-off current
DC current gain
hFE
VCE=2 V, IC= 50mA
IC= 500m A, IB= 50mA
IC= 500 mA, IB= 50mA
40
VCE(sat)
VBE(sat)
Cob
V
V
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
(VCB=10V IE=0,f=1MHz)
VCE= 10 V, IC= 50mA
8
pF
30
MHz
f T
CLASSIFICATION OF hFE
(1)
R
O
Y
Rank
Range
40-80
70-140
120-240
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