KSD1691 [JCST]
Transistor;
| 型号： | KSD1691 |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总3页 (文件大小：1426K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126C Plastic-Encapsulate Transistors
TO- 126C
KSD1691 TRANSISTOR (NPN)
FEATURES
1. BASE
z
Low Collector-Emitter Saturation Voltage & Large Collector Current
2. COLLECTOR
3. EMITTER
z
High Power Dissipation: PC = 1.3W (Ta=25°C)
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
Parameter
Value
Units
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
60
60
VCEO
VEBO
IC
V
7
V
5
A
PC
1.3
20
W
W
℃
℃
Collector Power Dissipation (Ta = 25 ℃)
Collector Power Dissipation (Tc = 25 ℃)
Junction Temperature
TJ
150
-55-150
Tstg
Storage Temperature
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
60
60
7
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO IC=100µA,IE=0
V(BR)CEO IC=1mA,IB=0
V(BR)EBO IE=100µA,IC=0
V
V
ICBO
IEBO
VCB=50V,IE=0
VEB=7V,IC=0
10
10
µA
µA
Emitter cut-off current
hFE(1)
hFE(2)
hFE(3)
VCE=1V,IC=2A
VCE=1V,IC=0.1A
VCE=1V,IC=5A
100
60
400
DC current gain
50
Collector-emitter saturation voltage
VCE(sat)
IC=2A,IB=0.2A
IC=2A,IB=0.2A
0.3
V
Base-emitter saturation voltage
Turn ON Time
VBE(sat)
ton
1.2
1
V
VCC = 10V, IC = 2A ,
µS
µS
µS
IB1=-IB2=0.2A,RL=5Ω
Storage Time
tstg
2.5
1
Fall Time
tf
CLASSIFICATION OF hFE(1)
Rank
O
Y
G
Range
100-200
160-320
200-400
Typical Characteristics
KSD1691
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