KTA1281Y(TO-92MOD) [JCST]
Transistor;
| 型号： | KTA1281Y(TO-92MOD) |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总4页 (文件大小：95K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92MOD Plastic-Encapsulate Transistors
TO-92MOD
KTA1281 TRANSISTOR (PNP)
1. EMITTER
2. COLLECTOR
3. BASE
FEATURES
z
z
z
Low Collector Saturation Voltage: VCE(sat)=-0.5V(Max.)(IC=-1A)
High Speed Switching time: tstg=1.0 μS(Typ.).
Complementary to KTC3209.
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
1 2 3
Symbol
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Value
Units
V
VCBO
VCEO
VEBO
IC
-50
-50
V
-5
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
-2
A
PC
1
W
TJ
150
-55-150
℃
℃
Storage Temperature
Tstg
ELECTRICAL CHARACTERISTICS (Tamb=25℃
unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
-50
-50
-5
TYP
MAX
UNIT
V
V(BR)CBO IC= -100 uA, IE=0
V(BR)CEO IC= -10mA, IB=0
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V(BR)EBO
ICBO
V
IE= -100μA, IC=0
VCB= -50 V , IE=0
VEB= -5V , IC=0
-0.1
-0.1
240
μA
μA
Emitter cut-off current
IEBO
hFE(1)
hFE(2)
VCE= -2V, IC= -0.5A
VCE= -2V, IC= -1.5A
70
40
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Out capacitance
VCE(sat) IC=-1A, IB= -0.05A
VBE(sat) IC=-1A, IB= -0.05A
-0.5
-1.2
V
V
fT
Cob
ton
ts
VCE=-2V, IC=-0.5A
100
40
MHz
pF
us
VCB= -10 V , IE=0 , f=1MHZ
Turn-on time
0.1
1
VCC=-30V,IB1=-IB2=-0.05A,
IC=-1A
Storage time
us
Fall time
tf
0.1
us
CLASSIFICATION OF hFE(1)
Rank
O
Y
Range
70-140
120 - 240
Typical Characteristics
KTA1281
相关型号：
©2020 ICPDF网 联系我们和版权申明