KTA1297GR [JCST]
Transistor;
| 型号： | KTA1297GR |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92S Plastic-Encapsulate Transistors
TO – 92S
KTA1297 TRANSISTOR (PNP)
1. EMITTER
2. COLLECTOR
3. BASE
FEATURES
z
General Purpose Switching Application
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Value
-20
Unit
V
Collector-Emitter Voltage
Emitter-Base Voltage
-20
V
-6
V
Collector Current
-2
A
PC
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
400
mW
℃/W
℃
RθJA
Tj
312
150
Tstg
Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
Min
-20
-20
-6
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC= -0.1mA,IE=0
IC=-1mA,IB=0
V
IE=-0.1mA,IC=0
VCB=-20V,IE=0
V
-0.1
-0.1
400
μA
μA
Emitter cut-off current
IEBO
VEB=-6V,IC=0
hFE(1)
hFE(2)
VCE(sat)
VBE
VCE=-2V, IC=-0.1A
VCE=-2V, IC=-2A
IC=-2A,IB=-0.1A
VCE=-2V, IC=-0.1A
VCB=-10V,IE=0, f=1MHz
VCE=-2V,IC=-0.5A
120
40
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
-0.5
V
V
-0.85
40
pF
Collector output capacitance
Transition frequency
Cob
fT
120
MHz
CLASSIFICATION OF hFE(1)
RANK
Y
GR
RANGE
120-240
200-400
A,Dec,2010
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