KTC3205Y [JCST]
Transistor;
| 型号： | KTC3205Y |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：246K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
TO-92L
KTC3205 TRANSISTOR (NPN)
1. EMITTER
2. COLLECTOR
3. BASE
FEATURES
Complementary to KTA1273
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Unit
Collector-Base Voltage
30
V
Collector-Emitter Voltage
Emitter-Base Voltage
30
V
5
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
2
1
A
PC
W
℃
℃
TJ
150
Tstg
-55-150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Ic= 1mA , IE=0
IC= 10mA, IB=0
30
30
5
V
V
IE= 1mA, IC=0
V
VCB= 30V, IE=0
0.1
0.1
320
2.0
1.0
µA
µA
IEBO
VEB= 5V, IC=0
DC current gain
hFE
VCE= 2 V, IC= 500 mA
IC= 1.5A, IB= 30 mA
VCE=2V, IC= 500mA
100
Collector-emitter saturation voltage
Base-emitter voltage
VCE (sat)
VBE
V
V
Transition frequency
V
CE= 2 V, IC= 500mA
120
13
MHz
pF
fT
Collector Output Capacitance
CLASSIFICATION OF hFE
Rank
VCB=10V, IE=0,f=1MHZ
Cob
O
Y
Range
100-200
160-320
A,Jun,2011
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