KTC3876O [JCST]
Transistor;
| 型号： | KTC3876O |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：872K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
SOT-23
KTC3876
TRANSISTOR (NPN)
FEATURES
· High hFE
1. BASE
· Complementary to KTA1505
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
35
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
30
V
5
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
500
200
150
-55-150
mA
mW
℃
PC
Tj
Tstg
Storage Temperature
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
IC=100μA, IE=0
Min
Typ
Max
Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO
35
30
5
V
V
V(BR)CEO IC= 1mA, IB=0
V(BR)EBO
ICBO
V
IE= 100μA, IC=0
VCB= 35V, IE=0
VEB= 5V, IC=0
0.1
0.1
μA
μA
Emitter cut-off current
IEBO
hFE1
VCE=1V, IC= 100mA
70
400
DC current gain
VCE=6V, IC= 400mA
O
25
40
hFE2
Y
Collector-emitter saturation voltage
base-emitter voltage
VCE(sat)
VBE
fT
IC=100mA, IB= 10mA
VCE=1V, IB= 100mA
VCE=6V, IC=20mA
VCB=6V,IE=0,f=1MHZ
0.25
1
V
V
Transition frequency
300
7
MHz
pF
Collector output capacitance
Cob
CLASSIFICATION OF hFE
O
Y
GR(G)
Rank
70-140
WO
120-240
WY
200-400
WG
Range
Marking
A,May,2011
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