KTC4075BL [JCST]
Transistor;
| 型号： | KTC4075BL |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor 开关 光电二极管 晶体管 |
| 文件： | 总1页 (文件大小：615K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
SOT-23
KTC4075 TRANSISTOR (NPN)
FEATURES
1. BASE
2. EMITTER
3. COLLECTOR
z
z
z
z
Excellent hFE linearity
High hFE
Low Noise
Complementary to KTA2014
MAXIMUM RATINGS(Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
60
Unit
V
VCBO
VCEO
VEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
50
V
5
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
150
100
150
-55-150
mA
mW
PC
Tj
℃
℃
Tstg
Storage Temperature
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Max
Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V(BR)CBO IC = 100μA, IE=0
60
50
5
V
V
V(BR)CEO IC = 1mA, IB=0
V(BR)EBO
ICBO
IEBO
hFE
IE= 100μA, IC=0
VCB=60V, IE=0
V
0.1
0.1
μA
μA
VEB=5V, IC=0
DC current gain
VCE= 6V, IC=2mA
IC=100mA, IB= 10mA
VCE=10V, IC= 1mA
VCE=10V, IE=0, f=1MHz
70
80
700
0.25
Collector-emitter saturation voltage
Transition frequency
VCE(sat)
fT
V
MHz
pF
Collector output capacitance
Noise figure
Cob
3.5
10
NF
VCE=6V,IE=0.1mA, f=1KHz,RG=10KΩ
dB
CLASSIFICATION OF hFE
Rank
O
70~140
LO
Y
GR
200~400
LGR
BL
Range
Marking
120~240
LY
350~700
LBL
A,May,2011
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