KTC4075O [JCST]
Transistor;
| 型号： | KTC4075O |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor 晶体 晶体管 开关 光电二极管 |
| 文件： | 总2页 (文件大小：129K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
SOT— 23
1. BASE
KTC4075 TRANSISTOR（NPN ）
2. EMITTER
3. COLLECTOR
FEATURES
Power dissipation
PCM
2.4
1.3
:
0.1
W（Tamb=25℃）
Collector current
ICM:
0.15
A
V
Collector-base voltage
V(BR)CBO 60
:
Operating and storage junction temperature range
Unit : mm
TJ，Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS（Tamb=25℃
unless otherwise specified）
Parameter
Symbol
Test
conditions
MIN
60
50
5
MAX
UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
V
V
(BR)CBO
IC = 100 μA， IE=0
IC = 1mA， IB=0
V
(BR)CEO
V
(BR)EBO
IE= 100μA， IC=0
ICBO
IEBO
VCB=60 V, IE=0
0.1
0.1
μA
μA
Emitter cut-off current
VEB=5V, IC=0
DC current gain
hFE
VCE= 6V， IC=2mA
IC=100mA, IB= 10mA
70
80
700
0.25
Collector-emitter saturation voltage
Transition frequency
VCEsat
V
VCE=10V, I = 1mA
MHz
dB
dB
C
fT
Collector output capacitance
VCE=10V， IE=0，f=1MHz
Cob
NF
3.5
10
VCE=6V，IE=0.1mA, f=1KHz，RG=10K?
Noise figure
CLASSIFICATION OF hFE
Rank
O
70~140
LO
Y
120~240
LY
GR
200~400
LGR
BL
350~700
LBL
Range
Marking
SOT-23 PACKAGE OUTLINE DIMENSIONS
D
b
0.2
e
C
e1
Dimensions In Millimeters
Symbol
Dimensions In Inches
Min
Max
Min
Max
A
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
1.100
0.100
1.000
0.500
0.150
3.000
1.400
2.550
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
0.043
0.004
0.039
0.020
0.006
0.118
0.055
0.100
A1
A2
b
c
D
E
E1
e
0.950TPY
0.550REF
0.037TPY
0.022REF
e1
L
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
8°
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