KTC4076Y [JCST]
Transistor;
| 型号： | KTC4076Y |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：413K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Transistors
KTC4076 TRANSISTOR (NPN)
FEATURES
SOT–323
Excellent hFE Linearity
Complementary to KTA2015
APPLICATIONS
General Purpose Switching
1. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
2. EMITTER
3. COLLECTOR
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Unit
V
Collector-Base Voltage
35
V
Collector-Emitter Voltage
Emitter-Base Voltage
30
V
5
Collector Current
500
mA
mW
℃/W
℃
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
100
PC
RΘJA
Tj
1250
150
Storage Temperature
Tstg
-55～+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
35
30
5
Typ
Max
Unit
V
V(BR)CBO IC=100µA, IE=0
V(BR)CEO IC=1mA, IB=0
V(BR)EBO IE=100µA, IC=0
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
ICBO
IEBO
VCB=35V, IE=0
0.1
0.1
240
µA
µA
VEB=5V, IC=0
Emitter cut-off current
hFE(1)
hFE(2)
VCE(sat)
VBE
VCE=1V, IC=100mA
VCE=6V, IC=400mA
IC=100mA, IB=10mA
VCE=1V, IC=100mA
VCB=6V,IC=20mA ,
VCB=6V, IE=0, f=1MHz
70
25
DC current gain
0.25
1
V
V
Collector-emitter saturation voltage
Base-emitter voltage
fT
300
7
MHz
pF
Transition frequency
Cob
Collector output capacitance
CLASSIFICATION OF hFE(1), hFE(2)
RANK
O
Y
RANG
hFE(1)
hFE(2)
70–140
25Min
WO
120–240
40Min
WY
MARKING
A,Oct,2010
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