KTC4375O(SOT-89) [JCST]
Transistor;
| 型号： | KTC4375O(SOT-89) |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总2页 (文件大小：123K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89 Plastic-Encapsulate Transistors
SOT-89
KTC4375 TRANSISTOR (NPN)
1. BASE
FEATURES
Low voltage
2. COLLECTOR
3. EMITTER
1
2
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
3
Symbol
VCBO
Parameter
Value
Units
30
V
Collector-Base Voltage
VCEO
VEBO
IC
Collector-Emitter Voltage
Emitter-Base Voltage
30
5
V
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
1.5
A
PC
0.5
W
℃
℃
TJ
150
-55-150
Tstg
Storage Temperature
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
30
30
5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V(BR)CBO IC=1mA,IE=0
V(BR)CEO IC=10mA,IB=0
V(BR)EBO IE=1mA,IC=0
V
V
ICBO
IEBO
hFE
VCB=30V,IE=0
0.1
0.1
320
2
μA
μA
VEB=5V,IC=0
DC current gain
VCE=2V,IC=0.5A
IC=1.5A,IB=30mA
VCE=2V,IC=0.5A
VCE=2V,IC=500mA
VCB=10V,IE=0,f=1MHz
100
Collector-emitter saturation voltage
Base-emitter voltage
VCE(sat)
VBE
V
V
1
Transition frequency
fT
120
MHz
pF
Collector output capacitance
Cob
40
CLASSIFICATION OF hFE(1)
Rank
O
Y
100-200
GO
160-320
GY
Range
Marking
Typical Characteristics
KTC4375
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