KTC4376Y [JCST]
Transistor;
| 型号： | KTC4376Y |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor 晶体管 |
| 文件： | 总1页 (文件大小：123K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
SOT-89-3L
KTC4376
TRANSISTOR (NPN)
1. BASE
FEATURES
2. COLLECTOR
z
z
z
Small Flat Package
High Current Application
Complementary to KTA1664
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Value
35
Unit
V
Collector-Emitter Voltage
Emitter-Base Voltage
30
V
5
V
Collector Current
800
mA
mW
℃/W
℃
PC
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
500
RθJA
Tj
250
150
Tstg
Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
Min
35
30
5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC=1mA,IE=0
IC=10mA,IB=0
V
IE=1mA,IC=0
V
VCB=35V,IE=0
100
100
320
nA
nA
Emitter cut-off current
IEBO
VEB=5V,IC=0
hFE(1)
hFE(2)
VCE(sat)
VBE
VCE=1V, IC=100mA
VCE=1V, IC=700mA
IC=500mA,IB=20mA
VCE=1V, IC=10mA
VCB=10V,IE=0, f=1MHz
VCE=5V,IC=10mA
100
35
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
0.5
0.8
V
V
0.5
13
pF
Collector output capacitance
Transition frequency
Cob
fT
120
MHz
CLASSIFICATION OF hFE(1)
O
Y
160–320
PY
RANK
RANGE
100–200
PO
MARKING
A,Nov,2010
相关型号：
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