KTC4377C(SOT-89-3L) [JCST]
Transistor;
| 型号： | KTC4377C(SOT-89-3L) |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：765K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
SOT-89-3L
KTC4377 TRANSISTOR (NPN)
1. BASE
FEATURES
Low voltage
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
30
10
V
6
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
2
A
PC
0.5
W
℃
℃
TJ
150
-55~150
Tstg
Storage Temperature
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
30
10
6
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO IC=1mA,IE=0
V(BR)CEO IC=10mA,IB=0
V(BR)EBO IE=1mA,IC=0
V
V
ICBO
IEBO
VCB=30V,IE=0
0.1
0.1
μA
μA
Emitter cut-off current
VEB=6V,IC=0
hFE(1)
hFE(2)
VCE(sat)
VBE
VCE=1V,IC=0.5A
VCE=1V,IC=2A
140
70
600
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
IC=2A,IB=50mA
VCE=1V,IC=2A
0.5
1.5
V
V
Transition frequency
fT
VCE=1V,IC=0.5A
VCB=10V,IE=0,f=1MHz
150
27
MHz
pF
Collector output capacitance
Cob
CLASSIFICATION OF hFE(1)
Rank
A
B
C
D
420-600
SD
Range
Marking
140-240
SA
200-330
SB
300-450
SC
A,Jun,2011
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