KTC4378(SOT-89-3L) [JCST]
Transistor;型号: | KTC4378(SOT-89-3L) |
厂家: | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
描述: | Transistor |
文件: | 总1页 (文件大小:669K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
SOT-89-3L
KTC4378 TRANSISTOR (NPN)
1. BASE
FEATURES
High voltage
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
Parameter
Value
Unit
80
V
Collector-Base Voltage
VCEO
VEBO
IC
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
60
5
V
V
1
A
PC
0.5
W
℃
℃
TJ
Junction Temperature
Storage Temperature
150
-55~150
Tstg
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
80
60
5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO IC=1mA,IE=0
V(BR)CEO IC=10mA,IB=0
V(BR)EBO IE=1mA,IC=0
V
V
ICBO
IEBO
VCB=50V,IE=0
0.1
0.1
μA
μA
Emitter cut-off current
VEB=4V,IC=0
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
VCE=2V,IC=0.05A
VCE=2V,IC=1A
100
30
320
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
IC=500mA,IB=50mA
IC=500mA,IB=50mA
VCE=10V,IC=50mA
VCB=10V,IE=0,f=1MHz
0.5
1.2
V
V
150
12
MHz
pF
Collector output capacitance
Cob
CLASSIFICATION OF hFE(1)
Rank
Y
100-200
TY
GR
160-320
TGR
Range
Marking
A,Jun,2011
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