KTD2058Y [JCST]
Transistor;
| 型号： | KTD2058Y |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：1738K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Transistors
TO-220F
KTD2058 TRANSISTOR (NPN)
1. BASE
2.COLLECTOTR
3. EMITTER
FEATURES
. Low Collector Saturation Voltage
: VCE(SAT) = 1. 0V(MAX) .
MAXIMUM RATINGS* Ta=25℃ unless otherwise noted
Symbol
Parameter
Value
Unit
V
VCBO
VCEO
VEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
60
60
V
7
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
3
2
A
PC
W
℃
℃
Tj
150
Tstg
Storage Temperature Range
-55-150
*These ratings are limiting values above which the serviceability of any semiconductor device may be
impaired.
ELECTRICAL CHARACTERISTICS(Ta=25℃
unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Ic=100µA, IE=0
Ic=50mA, IB=0
60
60
7
V
V
IE=100 µA, IC=0
VCB=60V, IE=0
V
100
100
200
1
µA
µA
IEBO
VEB=7V, IC=0
DC current gain
hFE(1)
VCE(sat)
VBE(on)
fT
VCE=5V, IC=0.5A
IC=2A, IB=0.2A
VCE=5V, IC=0.5A
VCE=5V, IC=0.5A
VCB=10V, IE=0, f=1MHz
60
Collector-emitter saturation voltage
Base-emitter voltage
V
V
1
Transition frequency
3
MHz
pF
Collector output capacitance
Turn-on Time
Cob
35
ton
0.65
1.3
0.65
Switching
Storage Time
tstg
us
time
Fall Time
tf
A,Sep,2011
Note: hFE(1) Classification O : 60-120, Y : 100-200
©2020 ICPDF网 联系我们和版权申明