MBR10100FCT [JCST]

Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 100V V(RRM), Silicon, TO-220AB, PLASTIC, TO-220F, 3 PIN;


型号：	MBR10100FCT
厂家：	JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
描述：	Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 100V V(RRM), Silicon, TO-220AB, PLASTIC, TO-220F, 3 PIN
文件：	总3页 (文件大小：728K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-220F Plastic-Encapsulate Diodes

MBR1060, 70, 80, 90, 100FCT

SCHOTTKY BARRIER RECTIFIER

TO-220F

1. ANODE

2. CATHODE

3. ANODE

FEATURES

 Schottky Barrier Chip

 Guard Ring Die Construction for Transient Protection

 Low Power Loss,High Efficiency

 High Surge Capability

 High Current Capability and Low Forward Voltage Drop

 For Use in Low Voltage, High Frequency Inverters,Free Wheeling,

and Polarity Protection Applications

MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )

Value

Symbol

Parameter

Unit

MBR10

60FCT

MBR10

70FCT

MBR10

80FCT

MBR10

90FCT

MBR10

100FCT

Peak repetitive reverse voltage

Working peak reverse voltage

DC blocking voltage

V_RRM

V_RWM

V_R

100

RMS reverse voltage

V_R(RMS)

I_O

Average rectified output current

Non-Repetitive peak forward surge current

8.3ms half sine wave

120

I_FSM

Power dissipation

℃/W

℃

P_D

R_ΘJA

T_j

Thermal resistance from junction to ambient

Junction temperature

125

Storage temperature

-55~+150

T_stg

℃

C,Jan,2014

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Device

Test conditions

Min

Typ

Max

Unit

MBR1060FCT

MBR1070FCT

MBR1080FCT

MBR1090FCT

MBR10100FCT

MBR1060FCT

V_(BR)

I_R=0.1mA

Reverse voltage

100

V_R=60V

V_R=70V

V_R=80V

V_R=90V

MBR1070FCT

MBR1080FCT

MBR1090FCT

I_R

0.1

Reverse current

MBR10100FCT

MBR1060FCT

V_R=100V

I_F=5A

0.8

V_F(1)

V_F(2)

C_tot

Forward voltage

MBR1070-100FCT

MBR1060-100FCT

MBR1060FCT

0.85

0.95

I_F=10A

150

V_R=4V,f=1MHz

Typical total capacitance

MBR1070-100FCT

150

C,Jan,2014

Typical Characteristics

MBR10100FCT

Reverse Characteristics

Forward Characteristics

1000

100

T_a=100℃

T_a=25℃

0.1

0.01

0.1

200

400

600

800

100

REVERSE VOLTAGE V_R(V)

FORWARD VOLTAGE V_F(mV)

Power Derating Curve

Capacitance Characteristics Per Diode

350

2.5

2.0

1.5

1.0

0.5

0.0

T_a=25℃

f=1MHz

300

250

200

150

100

125

150

REVERSE VOLTAGE V_R(V)

AMBIENT TEMPERATURE T_a(℃)

C,Jan,2014

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