MBR835(TO-220A) [JCST]
Rectifier Diode,;型号: | MBR835(TO-220A) |
厂家: | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
描述: | Rectifier Diode, |
文件: | 总2页 (文件大小:216K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220A Plastic-Encapsulate Diodes
MBR830, 35, 40, 45, 50, 60
SCHOTTKY BARRIER RECTIFIER
TO-220A
1. CATHODE
2. ANODE
FEATURES
Schottky Barrier Chip
Guard Ring Die Construction for Transient Protection
Low Power Loss,High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
and Polarity Protection Applications
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Value
MBR
845
MBR
830
MBR
835
MBR
840
MBR
850
MBR
860
Symbol
Parameter
Unit
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
VRRM
VRWM
VR
30
21
35
40
28
45
50
35
60
42
V
RMS reverse voltage
24.5
31.5
V
A
VR(RMS)
IO
Average rectified output current@ Tc=125℃
Non-Repetitive peak forward surge current
8.3ms half sine wave
8
150
A
IFSM
Power dissipation
2
W
℃/W
℃
PD
RΘJA
Tj
Thermal resistance from junction to ambient
Junction temperature
50
125
Storage temperature
-55~+150
Tstg
℃
A,Nov,2010
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Device
Test conditions
Min
Typ
Max
Unit
MBR830
MBR835
MBR840
MBR845
MBR850
MBR860
MBR830
30
35
40
45
50
60
IR=0.1mA
V(BR)
V
Reverse voltage
VR=30V
VR=35V
VR=40V
VR=45V
MBR835
MBR840
MBR845
IR
0.1
mA
Reverse current
MBR850
MBR860
VR=50V
VR=60V
MBR830-45
0.7
0.8
VF(1)
IF=8A
MBR850,60
MBR830-45
MBR850,60
MBR830-60
V
Forward voltage
0.84
0.95
VF(2)
Cj
IF=16A
VR=4V,f=1MHz
250
pF
Typical junction capacitance
A,Nov,2010
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