MBR835(TO-220A) [JCST]

Rectifier Diode,;
MBR835(TO-220A)
型号: MBR835(TO-220A)
厂家: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD    JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
描述:

Rectifier Diode,

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中文:  中文翻译
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD  
TO-220A Plastic-Encapsulate Diodes  
MBR830, 35, 40, 45, 50, 60  
SCHOTTKY BARRIER RECTIFIER  
TO-220A  
1. CATHODE  
2. ANODE  
FEATURES  
Schottky Barrier Chip  
Guard Ring Die Construction for Transient Protection  
Low Power Loss,High Efficiency  
High Surge Capability  
High Current Capability and Low Forward Voltage Drop  
For Use in Low Voltage, High Frequency Inverters,Free Wheeling,  
and Polarity Protection Applications  
MAXIMUM RATINGS ( Ta=25unless otherwise noted )  
Value  
MBR  
845  
MBR  
830  
MBR  
835  
MBR  
840  
MBR  
850  
MBR  
860  
Symbol  
Parameter  
Unit  
Peak repetitive reverse voltage  
Working peak reverse voltage  
DC blocking voltage  
VRRM  
VRWM  
VR  
30  
21  
35  
40  
28  
45  
50  
35  
60  
42  
V
RMS reverse voltage  
24.5  
31.5  
V
A
VR(RMS)  
IO  
Average rectified output current@ Tc=125  
Non-Repetitive peak forward surge current  
8.3ms half sine wave  
8
150  
A
IFSM  
Power dissipation  
2
W
/W  
PD  
RΘJA  
Tj  
Thermal resistance from junction to ambient  
Junction temperature  
50  
125  
Storage temperature  
-55~+150  
Tstg  
A,Nov,2010  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
Device  
Test conditions  
Min  
Typ  
Max  
Unit  
MBR830  
MBR835  
MBR840  
MBR845  
MBR850  
MBR860  
MBR830  
30  
35  
40  
45  
50  
60  
IR=0.1mA  
V(BR)  
V
Reverse voltage  
VR=30V  
VR=35V  
VR=40V  
VR=45V  
MBR835  
MBR840  
MBR845  
IR  
0.1  
mA  
Reverse current  
MBR850  
MBR860  
VR=50V  
VR=60V  
MBR830-45  
0.7  
0.8  
VF(1)  
IF=8A  
MBR850,60  
MBR830-45  
MBR850,60  
MBR830-60  
V
Forward voltage  
0.84  
0.95  
VF(2)  
Cj  
IF=16A  
VR=4V,f=1MHz  
250  
pF  
Typical junction capacitance  
A,Nov,2010  

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