NST3946 [JCST]
Transistor;
| 型号： | NST3946 |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总3页 (文件大小：371K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-563 Plastic-Encapsulate Transistors
NST3946 General purpose transistors (dual transistors)
SOT-563
DESCRIPTION
It is designed for general purpose amplifier applications . By putting two
Discrete devices in one package , this device is ideal for low – power surface
mount applications where board space is at a premium.
1
FEATURES
z
z
z
z
Low VCE(sat)
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Marking: 46
Equivalent circuit
A,Dec,2010
PNP 3906 Absolute maximum ratings (Ta=25℃)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
-40
Units
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-40
V
-5
V
Collector Current
-200
150
mA
mW
℃/W
℃
PC
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
RθJA
TJ
833
150
Tstg
Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
-40
-40
-5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO IC=-10μA, IE=0
V(BR)CEO IC=-1mA, IB=0
V(BR)EBO IE=-10μA, IC=0
V
V
ICBO
IEBO
VCB=-30V, IE=0
VEB=-5V, IC=0
-0.05
μA
μA
Emitter cut-off current
-0.05
VCE=-1V, IC=-0.1mA
VCE=-1V, IC=-1mA
60
80
DC current gain
hFE
VCE=-1V, IC=-10mA
VCE=-1V, IC=-50mA
VCE=-1V, IC=-100mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
VCE=-20V, IC=-10mA, f=100MHz
VCB=-5V, IE=0, f=1MHz
100
60
300
30
-0.25
-0.4
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat)
-0.65
-0.85
-0.95
V
VBE(sat)
V
Transition frequency
Output capacitance
fT
250
MHz
pF
Cob
4.5
A,Dec,2010
NPN 3904 Absolute maximum ratings (Ta=25℃)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
60
Units
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
40
V
5
V
Collector Current
200
mA
mW
℃/W
℃
PC
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
150
RθJA
TJ
833
150
Tstg
Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
60
40
5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO IC=10μA, IE=0
V(BR)CEO IC=1mA, IB=0
V(BR)EBO IE=10μA, IC=0
V
V
ICBO
IEBO
VCB=30V, IE=0
VEB=5V, IC=0
0.05
μA
μA
Emitter cut-off current
0.05
VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
40
70
DC current gain
hFE
VCE=1V, IC=10mA
100
60
300
VCE=-1V, IC=50mA
VCE=-1V, IC=100mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=20V, IC=20mA, f=100MHz
VCB=5V, IE=0, f=1MHz
30
0.2
0.3
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat)
0.65
300
0.85
0.95
V
VBE(sat)
V
Transition frequency
Output capacitance
fT
MHz
pF
Cob
4
A,Dec,2010
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