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S8050D [JCST]

TO-92 Plastic-Encapsulate Transistors; TO- 92塑封装晶体管
S8050D
型号： S8050D
厂家： JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD    JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
描述：

TO-92 Plastic-Encapsulate Transistors
TO- 92塑封装晶体管

晶体 晶体管
文件： 总4页 (文件大小：1050K)
中文：  中文翻译
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD  
TO-92 Plastic-Encapsulate Transistors  
TO-92  
S8050 TRANSISTOR (NPN)  
FEATURES  
1.EMITTER  
2.BASE  
z
Complimentary to S8550  
Collector current: IC=0.5A  
z
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)  
3.COLLECTOR  
Symbol  
Parameter  
Value  
Unit  
VCBO  
VCEO  
VEBO  
IC  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
40  
V
25  
V
5
V
Collector Current -Continuous  
Collector Power Dissipation  
Junction Temperature  
0.5  
A
PC  
0.625  
150  
W
TJ  
℃
℃
Tstg  
Storage Temperature  
-55-150  
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test  
conditions  
Min  
40  
25  
5
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
IC= 100μA, IE=0  
IC= 0.1mA, IB=0  
IE= 100μA, IC=0  
VCB= 40 V , IE=0  
VCE= 20 V , IB=0  
VEB= 5V, IC=0  
V
V
0.1  
0.1  
0.1  
400  
μA  
μA  
μA  
Collector cut-off current  
ICEO  
Emitter cut-off current  
IEBO  
hFE(1)  
VCE= 1V, IC= 50mA  
VCE= 1V, IC= 500mA  
IC=500mA, IB=50mA  
IC=500mA, IB=50mA  
85  
50  
DC current gain  
hFE(2)  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
VCE(sat)  
VBE(sat)  
0.6  
1.2  
V
V
VCE= 6V, IC=20mA  
f =30MHz  
Transition frequency  
fT  
150  
MHz  
CLASSIFICATION OF hFE(1)  
Rank  
B
C
D
D3  
300-400  
Range  
85-160  
120-200  
160-300  
www.cj-elec.com  
1
C,Jan,2015  
Typical Characteristics  
Typical Characterisitics  
S8050  
Static Characteristic  
hFE —— IC  
1000  
100  
10  
100  
80  
60  
40  
20  
0
COMMON EMITTER  
VCE=1V  
COMMON  
EMITTER  
480uA  
420uA  
Ta=25℃  
Ta=100℃  
360uA  
300uA  
240uA  
Ta=25℃  
180uA  
120uA  
IB=60uA  
3
500  
1
10  
30  
100  
0
4
8
12  
16  
20  
COLLECTOR CURRENT IC (mA)  
COLLECTOR-EMITTER VOLTAGE VCE (V)  
IC  
VBEsat ——  
VCEsat —— IC  
500  
300  
2000  
1000  
Ta=25℃  
100  
Ta=100℃  
Ta=100℃  
Ta=25℃  
30  
10  
β=10  
β=10  
100  
30  
500  
3
1
3
10  
30  
100  
1
10  
100  
500  
COLLECTOR CURRENT IC (mA)  
COLLECTOR CURRENT IC (mA)  
fT —— IC  
IC —— VBE  
1000  
100  
COMMON EMITTER  
VCE=1V  
COMMON EMITTER  
VCE=6V  
Ta=25℃  
30  
10  
300  
100  
Ta=100℃  
3
1
Ta=25℃  
0.3  
0.1  
10  
2
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
10  
30  
100  
COLLECTOR CURRENT IC (mA)  
BASE-EMMITER VOLTAGE VBE (V)  
VCB/ VEB  
Cob/ Cib ——  
PC —— Ta  
750  
625  
500  
375  
250  
125  
0
100  
f=1MHz  
IE=0/ IC=0  
Ta=25℃  
Cib  
30  
10  
Cob  
3
1
0.1  
0.3  
1
3
10  
20  
0
25  
50  
75  
100  
125  
150  
REVERSE VOLTAGE  
V
(V)  
AMBIENT TEMPERATURE Ta  
(℃)  
www.cj-elec.com  
2
C,Jan,2015  
TO-92 Package Outline Dimensions  
Dimensions In Millimeters  
Dimensions In Inches  
Symbol  
Min  
Max  
3.700  
1.400  
0.550  
0.510  
4.700  
Min  
Max  
0.146  
0.055  
0.022  
0.020  
0.185  
A
A1  
b
3.300  
1.100  
0.380  
0.360  
4.300  
3.430  
4.300  
0.130  
0.043  
0.015  
0.014  
0.169  
0.135  
0.169  
c
D
D1  
E
4.700  
0.185  
e
1.270 TYP  
0.050 TYP  
e1  
L
Φ
h
2.440  
14.100  
2.640  
14.500  
1.600  
0.380  
0.096  
0.555  
0.104  
0.571  
0.063  
0.015  
0.000  
0.000  
TO-92 Suggested Pad Layout  
www.cj-elec.com  
3
C,Jan,2015  
TO-92 7DSHꢀDQGꢀ5HHO  
ZZZꢀFMꢁHOHFꢀFRPꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂ4ꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂꢂ C,Jan,2015  

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