S9012MH [JCST]
Transistor;
| 型号： | S9012MH |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总2页 (文件大小：253K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
WBFBP-03B Plastic-Encapsulate Transistors
S9012M
TRANSISTOR
C
WBFBP-03B
(1.2×1.2×0.5)
unit: mm
DESCRIPTION
PNP Epitaxial Silicon Transistor
TOP
FEATURES
Complementary to S9013M
Excellent hFE linearity
B
E
1. BASE
C
2. EMITTER
3. COLLECTOR
APPLICATION
BACK
150mW Output Amplifier of Potable Radios in Class
B Push-pull Operation.
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM,Note book PC, etc.)
E
B
MARKING: 2T1
C
2T1
B E
MAXIMUM RATINGS TA=25℃ unless otherwise noted
Symbol
Parameter
Value
Units
V
VCBO
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-40
VCEO
VEBO
IC
-25
V
-5
V
Collector Current -Continuous
Collector Dissipation
-500
mA
mW
℃
PC
150
TJ
Junction Temperature
Storage Temperature
150
-55-150
Tstg
℃
ELECTRICAL CHARACTERISTICS（Tamb=25℃
unless otherwise specified）
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
-40
-25
-5
V
IC= -100μA, IE=0
IC= -1mA, IB=0
V
V
IE=-100μA, IC=0
VCB=-40 V ,IE=0
-0.1
-0.1
-0.1
400
-0.6
-1.2
μA
μA
μA
Collector cut-off current
ICEO
VCE=-20V ,IB=0
Emitter cut-off current
IEBO
VEB= -5V , IC=0
DC current gain
hFE
VCE=-1V, IC=-50mA
IC=-500mA, IB= -50mA
IC=-500mA, IB= -50mA
VCE=-6V, IC= -20mA
f=30MHz
120
150
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE(sat)
BE(sat)
V
V
V
Transition frequency
MHz
pF
fT
Collector output capacitance
Cob
5
VCB=-10V,IE=0,f=1MHz
CLASSIFICATION OF hFE
Rank
L
H
J
120-200
200-350
300-400
Range
Typical Characteristics
S9012M
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