S9014A(TO-92) [JCST]
Transistor;
| 型号： | S9014A(TO-92) |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总2页 (文件大小：541K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO-92
S9014
TRANSISTOR (NPN)
1. EMITTER
2. BASE
FEATURES
z
High Total Power Dissipation.(PC=0.45W)
High hFE and Good Linearity
Complementary to S9015
z
z
3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
50
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
45
V
5
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
0.1
A
PC
0.45
150
-55-150
W
℃
℃
TJ
Tstg
Storage Temperature
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
Min
50
45
5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC=100μA, IE=0
IC= 1mA, IB=0
V
IE=100μA, IC=0
VCB=50V, IE=0
V
0.1
0.1
0.1
1000
0.3
1
μA
μA
μA
Collector cut-off current
ICEO
VCE=35V, IB=0
Emitter cut-off current
IEBO
VEB= 5V, IC=0
DC current gain
hFE
VCE=5V, IC= 1mA
IC=100mA, IB= 5mA
IC=100mA, IB= 5mA
60
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat)
VBE(sat)
V
V
V
CE=5V, IC= 10mA
Transition frequency
fT
150
MHz
f=30MHz
CLASSIFICATION OF hFE(1)
Rank
A
B
C
D
60-150
100-300
200-600
400-1000
Range
A,Apr,2011
A,Apr,2011
Typical Characterisitics
S9014
hFE ——
Static Characteristic
IC
1000
8
Ta=100 o
C
18uA
7
16.2uA
14.4uA
12.6uA
108uA
6
5
Ta=25 o
C
9uA
100
4
7.2uA
3
2
1
0
5.4uA
3.6uA
IB=1.8uA
45
VCE=5V
10
0
5
10
15
20
25
30
35
40
50
1
10
100
200
100
20
0.4
COLLECTOR CURRENT IC (mA)
COLLECTOR-EMITTER VOLTAGE VCE (V)
IC
VBEsat ——
VCEsat ——
IC
1200
1000
800
600
400
200
0
1000
Ta=25℃
Ta=100℃
100
Ta=100℃
Ta=25℃
β=20
β=20
10
0.1
0.1
1
10
100
1
10
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
Cob/ Cib ——
IC
VCB/ VEB
VBE ——
50
5000
Cib
10
1000
Ta=25℃
Cob
1
Ta=100℃
f=1MHz
IE=0/ IC=0
Ta=25 oC
VCE=5V
100
0.1
0.1
0.1
1
10
100
1
10
COLLCETOR CURRENT IC (mA)
REVERSE VOLTAGE
V
(V)
IC
fT ——
Pc —— Ta
1000
100
10
500
400
300
200
100
0
VCE=5V
Ta=25 oC
1
1
10
0
25
50
75
100
125
60
COLLECTOR CURRENT IC (mA)
AMBIENT TEMPERATURE Ta (℃)
A,Apr,2011
相关型号：
S9014B-BP
100mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3
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S9014C-TS01-AP
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3
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