S9014C-G [WEITRON]
Transistor;
| 型号： | S9014C-G |
| 厂家： | 
WEITRON TECHNOLOGY |
| 描述： | Transistor 晶体 晶体管 光电二极管 放大器 |
| 文件： | 总4页 (文件大小：772K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S9014
NPN General Purpose Transistors
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
1
2
3
ABSOLUTE MAXIMUM RATINGS
(Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Symbol
Unit
Vdc
Vdc
Vdc
mAdc
Value
45
50
V
CEO
V
CBO
V
5.0
100
EBO
I
C
P
0.4
Total Device Dissipation T =25 C
W
C
A
D
150
Junction Temperature
Storage, Temperature
T
j
-55 to +150
Tstg
C
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min
Max
Unit
-
Collector-Emitter Breakdown Voltage (I = 0.1 mAdc, I =0)
V
45
Vdc
C
B
(BR)CEO
-
-
50
Vdc
Vdc
Collector-Base Breakdown Voltage (I = 100uAdc, I =0)
V
V
C
B
(BR)CBO
5.0
Emitter-Base Breakdown Voltage (I = 100 uAdc, I =0)
(BR)EBO
E
C
-
-
I
uAdc
uAdc
0.1
0.1
Collector Cutoff Current (V = 50 Vdc, I =0)
CBO
CB
E
I
d
Emitter Cutoff Current (V = 3.0V c, I =0)
EBO
EB
C
WEITRON
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S9014
WEITRON
Electrical Characteristics(T =25 C unless otherwise noted) (Countinued)
A
Symbol
Unit
Max
Characteristics
Min
On Characteristics
DC Current Gain
(I = 1mAdc, V =5Vdc)
H
FE
1000
0.3
60
-
C
CE
Collector-Emitter Saturation Voltage
(I = 100 mAdc, I = 5 mAdc)
V
CE(sat)
-
Vdc
C
B
Base-Emitter Saturation Voltage
(I = 100 mAdc, I = 5 mAdc)
V
-
BE(sat)
Vdc
1
-
C
B
Transition Frequency
(I = 10 mAdc, V = 5 Vdc, f=30MHz)
MHz
f
T
150
C
CE
CLASSIFICATION OF h
FE
B
C
Rank
A
D
Range
400-1000
100-300
200-600
60-150
WEITRON
http://www.weitron.com.tw
S9014
FIG.1
FIG.2
FIG.4
FIG.3
WEITRON
http://www.weitron.com.tw
S9014
TO-92 Outline Dimensions
unit:mm
E
TO-92
Dim
A
B
C
D
Min
3.30
1.10
0.38
0.36
4.40
3.43
4.30
Max
3.70
1.40
0.55
0.51
4.70
-
C
E
G
H
J
4.70
J
1.270TYP
K
K
L
2.44
14.10
2.64
14.50
G
WEITRON
http://www.weitron.com.tw
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