S9014D [JCST]
Transistor;
| 型号： | S9014D |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总2页 (文件大小：117K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO-92
S9014
TRANSISTOR (NPN)
1. EMITTER
2. BASE
FEATURES
z
z
z
High total power dissipation.(PC=0.45W)
High hFE and good linearity
Complementary to S9015
3. COLLECTOR
1 2 3
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
50
Units
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
45
V
5
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
0.1
A
PC
0.45
150
-55-150
W
℃
℃
TJ
Tstg
Storage Temperature
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
MIN
50
45
5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC=100μA, IE=0
IC= 1mA, IB=0
V
IE=100μA, IC=0
VCB=50V, IE=0
V
0.1
0.1
0.1
1000
0.3
1
μA
μA
μA
Collector cut-off current
ICEO
VCE=35V, IB=0
Emitter cut-off current
IEBO
VEB= 5V, IC=0
DC current gain
hFE
VCE=5V, IC= 1mA
IC=100mA, IB= 5mA
IC=100mA, IB= 5mA
60
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat)
VBE(sat)
V
V
V
CE=5V, IC= 10mA
Transition frequency
fT
150
MHz
f=30MHz
CLASSIFICATION OF hFE(1)
Rank
A
B
C
D
60-150
100-300
200-600
400-1000
Range
Typical Characteristics
S9014
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