S9015A(TO-92) [JCST]
Transistor;
| 型号： | S9015A(TO-92) |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：295K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
TO-92 Plastic-Encapsulate Transistors
TO-92
S9015
TRANSISTOR (PNP)
1.EMITTER
2. BASE
FEATURES
z
z
z
High Total Power Dissipation.(PC=0.45W)
High hFE and Good Linearity
Complementary to S9014
3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-50
V
-45
V
-5
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
-0.1
A
PC
0.45
150
W
℃
℃
Tj
Tstg
Storage Temperature
-55-150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
IC= -100μA, IE=0
IC= -1mA, IB=0
Min
-50
-45
-5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
IE=-100μA, IC=0
VCB=-50V, IE=0
-0.05
-0.05
1000
-0.3
-1
μA
μA
Emitter cut-off current
IEBO
VEB= -5V, IC=0
DC current gain
hFE
VCE=-5V, IC= -1mA
IC=-100mA, IB= -10mA
IC=-100mA, IB=-10mA
60
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat)
VBE(sat)
V
V
VCE=-5V, IC= -10mA
f=30MHz
Transition frequency
100
MHz
fT
CLASSIFICATION OF hFE(1)
A
B
C
D
Rank
60-150
100-300
200-600
400-1000
Range
A,June,2011
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