S9015D [JCST]
Transistor;
| 型号： | S9015D |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：32K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
S9015 TRANSISTOR (PNP)
TO-92
FEATURES
1. EMITTER
2. BASE
Power dissipation
PCM:
0.45
W (Tamb=25℃)
3. COLLECTOR
Collector current
ICM:
-0.1
-50
A
V
1 2 3
Collector-base voltage
V(BR)CBO
:
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
Ic= -100µA, IE=0
Ic= -1mA, IB=0
MIN
-50
-45
-5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
IE=-100µA, IC=0
VCB=-50V, IE=0
-0.05
-0.05
1000
-0.3
-1
µA
µA
IEBO
VEB= -5V, IC=0
Emitter cut-off current
hFE(1)
VCE=-5V, IC= -1mA
IC=-100mA, IB= -10mA
IC=-100mA, IB=-10mA
60
DC current gain
VCE(sat)
VBE(sat)
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE=-5V, IC= -10mA
150
MHz
Transition frequency
fT
f=30MHz
CLASSIFICATION OF hFE(1)
Rank
A
B
C
D
Range
60-150
100-300
200-600
400-1000
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