S9015LT1H [JCST]
Transistor;
| 型号： | S9015LT1H |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor 晶体 晶体管 光电二极管 |
| 文件： | 总2页 (文件大小：128K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
S9015LT1
TRANSISTOR（ PNP ）
SOT— 23
1. BASE
FEATURES
2. EMITTER
3. COLLECTOR
Power dissipation
PCM
Collector current
ICM
:
0.2
-0.1
W（Tamb=25℃）
:
A
V
2.4
1.3
Collector-base voltage
V(BR)CBO : -50
Operating and storage junction temperature range
TJ，Tstg: -55℃ to +150
Unit : mm
ELECTRICAL CHARACTERISTICS（Tamb=25℃
unless otherwise specified）
Parameter
Symbol
Test
conditions
MIN
-50
-45
-5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
Ic= -100μA， IE=0
Ic= -0.1mA， IB=0
(BR)CBO
V
V
(BR)CEO
V
IE=-100μA， IC=0
VCB=-50 V , IE=0
V
(BR)EBO
ICBO
IEBO
-0.1
-0.1
1000
-0.3
-1
μA
μA
Emitter cut-off current
VEB= -5V , IC=0
DC current gain
HFE(1)
VCE=-5V, IC= -1mA
IC=-100 mA, IB= -10mA
IC=-100 mA, IB=-10mA
200
150
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat)
VBE(sat)
V
V
VCE=-5V, I = -10mA
C
Transition frequency
fT
MHz
f=30MHz
CLASSIFICATION OF H
FE(1)
Rank
L
H
Range
200-450
450-1000
DEVICE MARKING : S9015LT1=M6
SOT-23 PACKAGE OUTLINE DIMENSIONS
D
b
0.2
e
C
e1
Dimensions In Millimeters
Symbol
Dimensions In Inches
Min
Max
Min
Max
A
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
1.100
0.100
1.000
0.500
0.150
3.000
1.400
2.550
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
0.043
0.004
0.039
0.020
0.006
0.118
0.055
0.100
A1
A2
b
c
D
E
E1
e
0.950TPY
0.550REF
0.037TPY
0.022REF
e1
L
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
8°
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