SBL3060CT [JCST]
Rectifier Diode;
| 型号： | SBL3060CT |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Rectifier Diode |
| 文件： | 总2页 (文件大小：216K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220 Plastic-Encapsulate Diodes
SBL3030CT, 35CT, 40CT, 45CT, 50CT, 60CT
SCHOTTKY BARRIER RECTIFIER
TO-220
1. ANODE
2. CATHODE
3. ANODE
FEATURES
Schottky Barrier Chip
Guard Ring Die Construction for Transient Protection
Low Power Loss,High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
and Polarity Protection Applications
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Value
SBL
SBL
SBL
SBL
SBL
SBL
Symbol
Parameter
Unit
3030CT 3035CT 3040CT 3045CT 3050CT 3060CT
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
VRRM
VRWM
VR
30
21
35
40
28
45
50
35
60
42
V
RMS reverse voltage
24.5
31.5
V
A
VR(RMS)
IO
Average rectified output current@ Tc=100℃
Non-Repetitive peak forward surge current
8.3ms half sine wave
30
250
A
IFSM
Power dissipation
2
W
℃/W
℃
PD
RΘJA
Tj
Thermal resistance from junction to ambient
Junction temperature
50
125
Storage temperature
-55~+150
Tstg
℃
A,Nov,2010
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Device
Test conditions
Min
Typ
Max
Unit
SBL3030CT
SBL3035CT
SBL3040CT
SBL3045CT
SBL3050CT
SBL3060CT
30
35
40
45
50
60
V(BR)
IR=1mA
V
Reverse voltage
SBL3030CT
SBL3035CT
SBL3040CT
SBL3045CT
VR=30V
VR=35V
VR=40V
VR=45V
IR
1
mA
Reverse current
SBL3050CT
SBL3060CT
VR=50V
VR=60V
SBL3030CT-3045CT
0.55
0.7
VF
IF=15A
V
Forward voltage
SBL3050CT,3060CT
SBL3030CT-3060CT
Ctot
VR=4V,f=1MHz
420
pF
Typical total capacitance
A,Nov,2010
相关型号：
SBL3060PT
肖特基势垒二极管Schottky Barrier Diodes，低压降肖特基势垒二极管Low VF Schottky Barrier Diodes，Tj = -40°C ~ 125°C, Tjm = 125°C。
SIRECTIFIER
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