SS8550D3(TO-92) [JCST]
Transistor;
| 型号： | SS8550D3(TO-92) |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：797K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
SS8550 TRANSISTOR (PNP)
TO-92
FEATURES
Power dissipation
PC : 1 W (TA=25.)
1. EMITTER
2. BASE
3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Junction Temperature
Storage Temperature
Value
Unit
-40
V
-25
V
-5
V
-1.5
A
Tj
150
℃
℃
Tstg
-55-150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
-40
-25
-5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO IC=-100uA, IE=0
V(BR)CEO IC=-0.1mA, IB=0
V(BR)EBO IE=-100μA, IC=0
V
V
ICBO
ICEO
VCB=-40V, IE=0
-0.1
-0.1
-0.1
400
μA
μA
uA
Emitter cut-off current
VCE=-20V, IE=0
Emitter cut-off current
IEBO
VEB=-5V, IC=0
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
VBE(on)
Cob
VCE=-1V, IC=-100mA
VCE=-1V, IC=-800mA
IC=-800mA, IB=-80mA
IC=-800mA, IB=-80mA
VCE=-1V, IC=-10mA
VCB=-10V, IE=0mA,f=1MHZ
VCE=-10V, IC=-50mA,f=-30MHZ
85
40
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
-0.5
-1.2
-1
V
V
V
Out capacitance
20
pF
MHz
Transition frequency
fT
100
CLASSIFICATION OF hFE(2)
Rank
B
C
D
D3
Range
85-160
120-200
160-300
300-400
A,Apr,2011
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