SS8550L [JCST]
Transistor;
| 型号： | SS8550L |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总2页 (文件大小：420K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
SS8550 TRANSISTOR (PNP)
SOT–23
FEATURES
High Collector Current
Complementary to SS8050
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
1. BASE
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Unit
V
2. EMITTER
3. COLLECTOR
Collector-Base Voltage
-40
Collector-Emitter Voltage
Emitter-Base Voltage
-25
V
-5
V
Collector Current
-1.5
A
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
300
mW
℃/W
℃
PC
417
RΘJA
Tj
150
Storage Temperature
Tstg
-55～+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
V(BR)CBO
IC=-100µA, IE=0
-40
V
Collector-base breakdown voltage
V(BR)CEO
V(BR)EBO
ICBO
IC=-0.1mA, IB=0
-25
-5
V
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IE=-100µA, IC=0
V
VCB=-40V, IE=0
-100
-100
-100
400
nA
nA
nA
ICEO
VCE=-20V, IB=0
Collector cut-off current
IEBO
VEB=-5V, IC=0
Emitter cut-off current
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
VBE
VCE=-1V, IC=-100mA
VCE=-1V, IC=-800mA
IC=-800mA, IB=-80mA
IC=-800mA, IB=-80mA
VCE=-1V, IC=-10mA
VCE=-10V,IC=-50mA , f=30MHz
VCB=-10V, IE=0, f=1MHz
120
40
DC current gain
-0.5
-1.2
-1
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
V
fT
100
MHz
pF
Transition frequency
Cob
20
Collector output capacitance
CLASSIFICATION OF hFE(1)
RANK
L
H
200–350
Y2
J
RANGE
120–200
300–400
MARKING
A,Apr,2011
Typical Characterisitics
SS8550
hFE ——
IC
Static Characteristic
500
-180
1mA
-160
0.9mA
Ta=100℃
0.8mA
-140
-120
-100
-80
-60
-40
-20
-0
Ta=25℃
0.7mA
0.6mA
0.5mA
100
0.4mA
0.3mA
0.2mA
IB=0.1mA
-4.5
VCE=-1V
10
-0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
-5.0
-0.1
-1
-10
-100
-1000
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (mA)
VBEsat ——
IC
IC
VCEsat ——
-1000
-900
-800
-700
-600
-500
-400
-300
-200
-1000
-100
-10
Ta=25℃
Ta=100℃
Ta=25℃
Ta=100℃
β=10
β=10
-1
0.2
-0.1
-1
-10
-100
-1000
-1
-10
-100
-1000
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
VBE —— IC
VCB/ VEB
Cob/ Cib ——
-1000
-100
-10
100
f=1MHz
IE=0/ IC=0
Ta=25 oC
Cib
Cob
Ta=100 o
C
Ta=25℃
-1
VCE=-1V
-900
-0.1
-200
1
-0.2
20
-300
-400
-500
-600
-700
-800
-1000
-1
-10
REVERSE VOLTAGE
V
(V)
BASE-EMMITER VOLTAGE VBE (mV)
Pc —— Ta
IC
fT ——
500
350
300
250
200
150
100
50
100
VCE-10V
Ta=25 oC
10
0
-1
-10
-100
0
25
50
75
100
125
150
COLLECTOR CURRENT IC (mA)
AMBIENT TEMPERATURE Ta (℃)
A,Apr,2011
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