PL-DD0-00-S30-C0 [JDSU]
850 nm 2.5 G GaAs PIN Die; 850纳米2.5G的对GaAs PIN DIE
| 型号： | PL-DD0-00-S30-C0 |
| 厂家： | 
JDSU |
| 描述： | 850 nm 2.5 G GaAs PIN Die |
| 文件： | 总3页 (文件大小：129K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
COMMUNICATIONS COMPONENTS
850 nm 2.5 G GaAs PIN Die
PL-DD0-00-S30-C0
Key Features
•ꢀTopsideꢀconnectionsꢀforꢀbothꢀcontacts
•ꢀLargeꢀtopsideꢀdetectionꢀarea
•ꢀAnti-reflectiveꢀcoatingꢀforꢀ850ꢀnm
•ꢀMonolithicꢀinsulatingꢀmountingꢀsurface
•ꢀDataꢀratesꢀfromꢀ622ꢀMbpsꢀtoꢀ2.5ꢀGbps
•ꢀCustomꢀphysicalꢀconfigurationꢀandꢀperformanceꢀꢀ ꢀ
ꢀ specificationꢀtolerancesꢀareꢀavailable
ꢀ
Benefits
The JDSU single die 850 nm 2.5 Gbps GaAs PIN is designed for high-speed opti-
cal data communication applications. The topside illuminated device has a large
optical detection area, Ø=120 mm, for increased process tolerance during assembly.
The backside mounting surface is electrically isolated from the device electrodes for
simplified assembly. The PIN is designed for datacom applications using 850 nm
multi-mode 50/125 mm or 62.5/125 mm fiber.
• Large active area provides improved
alignment tolerances and ease of
barrel attachment
• Small die dimensions allow flexible
assembly options
wEBSITE: ꢀꢀꢀ.jdsu.com
NORTH AMERICA: 800 498-JDSU (5378)
wORlDwIDE: +800 5378-JDSU
850 NM 2.5 G GAAS PIN DIE
ꢀ
Mounting Dimensions
0.310
0.203 0.013
0.155
4X 0.031
0.119
0.089
0.089
+
-
0.010
0.000
1
0.005
Note
1ꢁDeviceꢁAnode
ꢀꢁDeviceꢁCathode
2
+
0.010
0.005
-
0.000
Dimensions are in mm
Shipping Information
Shipped in anti-static 2” x 2” gel pack containers. 1000 per gel pack.
Absoꢁute Maximum Ratings
Parameter
(Tcase = 30 °C, Continuous Wave (CW) operation unless otherwise stated.)
Symboꢁ
Ratings
Unit
Storage temperature
Forward current
Reverse voltage
Reverse current
ESD1
Tst
If
BVRPD
IR
-40 to +125
5
-40
1
°C
mA
V
mA
Class 1
Note:
Conditions exceeding those listed may cause permanent damage to the device. Devices subjected to conditions beyond the limits specified for extended periods of time may
adversely affect reliability.
1. HBM
850 NM 2.5 G GAAS PIN DIE
Eꢁectro-opticaꢁ Characteristics
Parameter
(Tcase = 30 °C, CW operation unless otherwise stated.)
Symboꢁ
Test Condition
Min.
Typ.
Max.
Unit
PINꢀDiode
Detection wavelength
Operating temperature
Detection aperture
Responsivity
lp
Top
D
850
nm
°C
mm
A/W
-40
85
120
0.6
R
VR = 1.6 V
l = 850 nm
VR = 1.6 V
0.55
Dark current
Breakdown voltage
Capacitance
ID
VB
C
0.1
0.75
100
3
1.0
0.8
nA
V
pF
40
0.6
VR = 2.0 V
f = 1 MHz
20% - 80%
20% - 80%
VR = 2.0 V
Rise/Fall time1
Bandwidth
tr
tf
BW
psec
GHz
1. Packaging, coupling, electronics and optical measurement hardware affect rise/fall time measurement.
Order Information
For more information on this or other products and their availability, please contact your local JDSU account manager or
JDSU directly at 1-800-498-JDSU (5378) in North America and +800-5378-JDSU worldwide or via e-mail at
customer.service@jdsu.com.
Sampꢁe: Pl-DD0-00-S30-C0
Part Number
Description
PL-DD0-00-S30-C0ꢁ
850ꢁnmꢁꢀ.5ꢁGꢁGaAsꢁPINꢁdieꢁ
wORlDwIDE: +800 5378-JDSU
wEBSITE: ꢀꢀꢀ.jdsu.com
NORTH AMERICA: 800 498-JDSU (5378)
Product specifications and descriptions in this document subject to change without notice. © 2008 JDS Uniphase Corporation 30149324 000 0408 PL-DD0-00-S30-C0.DS.CC.AE
April 2008
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