PL-VD0-00-S20-C0 [JDSU]

850 nm 2.5 G VCSEL Die; 850纳米2.5G的VCSEL DIE


型号：	PL-VD0-00-S20-C0
厂家：	JDSU
描述：	850 nm 2.5 G VCSEL Die 850纳米2.5G的VCSEL DIE
文件：	总3页 (文件大小：154K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

COMMUNICATIONS COMPONENTS

850 nm 2.5 G VCSEL Die

PL-VD0-00-S20-C0

Key Features

• Data rates from 622 Mbps to 2.5 Gbps

• -40°C to 85°C operation

• <2.2 V operation

• Backside cathode and topside anode conﬁguration

• Custom speciﬁcation tolerances available

Beneﬁts

• Very high reliability

The JDSU 850 nm 2.5 Gbps VCSEL (Vertical Cavity Surface Emitting Laser)

is designed for high-speed optical data communication applications. The pat-

ented JDSU VCSEL is engineered for performance and reliability over extended

operating temperatures and power supply conditions. Extensive production lot

testing and rigorous lot qualiﬁcation processes ensure speciﬁcation compliance

and high reliability.

Low FIT

High MTBF

• Excellent performance over extended

operating temperatures

WEBSITE: www.jdsu.com

NORTH AMERICA: 800 498-JDSU (5378)

WORLDWIDE: +800 5378-JDSU

850 NM 2.5 G VCSEL DIE

Mounting Dimensions

0.203 0.013

0.0150

4X R0.015

0.0345

0.224

0.0870

0.155

0.0870

0.155

0.0345

Note

0.224

1 Device Anode

2 Device Cathode

Dimensions are in mm

Shipping Information

Shipped in anti-static 2” x 2” gel pack containers. 1000 per gel pack.

Absolute Maximum Ratings

Parameter

(T_case= 30°C , Continuous Wave (CW) operation unless otherwise stated)

Symbol

Ratings

Unit

Storage temperature

Laser forward current

Laser reverse voltage

ESD

T_st

I_f

BVR_PD

-40 to +100

-5

Class 1

°C

Note:

Conditions exceeding those listed may cause permanent damage to the device. Devices subjected to conditions beyond the limits speciﬁed for extended periods of time may

adversely affect reliability.

1. HBM

850 NM 2.5 G VCSEL DIE

Electro-optical Characteristics

VCSEL Parameter

(T_case= 30°C , CW operation unless otherwise stated)

Symbol

Test Condition

Minimum

Typical

Maximum

Unit

Peak emission wavelength

Operating temperature

RMS spectral width

λ_ptemperature coefﬁcient

Beam divergence

λ_p

830

-40

845

860

0.85

°C

nm/°C

deg

T_op

Δλ

Δλ_p

I_f= 8 mA

0.06

_out= 1.4 mW

Full width 1/e²

I_f= 8 mA

Relative intensity noise

Rise/Fall time¹

RIN₁₂

t_r

t_f

-130

100

1.5

-122

130

2.5

dB/Hz

psec

20% - 80%

Threshold current

I_th

_thtemperature variation

ΔI_th

V_f

R_s

T = -20°C to 85°C

P_out= 1.4 mW

1.0

1.7

0.3

1.5

2.0

0.45

Ohms

mW/mA

PPM/°C

Laser forward voltage

Series resistance

Slope efﬁciency²

0.20

Slope efﬁciency temperature variation

Δη/ΔT

-5000

1. Drive electronics and optical measurement hardware affect Rise/Fall Time measurement. Rise/Fall Time is speciﬁed using an AC coupled 50 Ω voltage source and DC bias T.

2. Tighter speciﬁcation ranges are available upon request.

Order Information

For more information on this or other products and their availability, please contact your local JDSU account manager or

JDSU directly at 1-800-498-JDSU (5378) in North America and +800-5378-JDSU worldwide, or via e-mail at

customer.service@jdsu.com.

Sample: PL-VD0-00-S20-C0

Part Number

Description

PL-VD0-00-S20-C0

850 nm 2.5G VCSEL Die

WORLDWIDE: +800 5378-JDSU

WEBSITE: www.jdsu.com

NORTH AMERICA: 800 498-JDSU (5378)

January 2009

相关型号：