JCT1225B [JIEJIE]
25A SCRs;
| 型号： | JCT1225B |
| 厂家： | 
JIEJIE MICROELECTRONICS CO.,Ltd |
| 描述： | 25A SCRs |
| 文件： | 总6页 (文件大小：373K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIEJIE MICROELECTRONICS CO. , Ltd
JCT1025/1225 Series
25A SCRs
Rev.2.0
DESCRIPTION:
JCT1025/1225 series of silicon controlled rectifiers,
with high ability to withstand the shock loading of
large current, provide high dv/dt rate with strong
resistance to electromagnetic interference. They
are especially recommended for use on solid state
relay, motorcycle, power charger, T-tools etc.
1
1
2
2
3
3
TO-220A
TO-220C
TO-220B
1
1
2
2
3
3
MAIN FEATURES
TO-220F
K(1)
Symbol
IT(RMS)
IGT
Value
25
Unit
A
A(2)
≤40
1.6
mA
V
G(3)
VTM
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Tstg
Value
Unit
℃
℃
V
Storage junction temperature range
Operating junction temperature range
-40-150
-40-125
Tj
Repetitive peak off-state voltage(Tj=25℃)
Repetitive peak reverse voltage(Tj=25℃)
Non repetitive surge peak Off-state voltage
VDRM
VRRM
VDSM
VRSM
1000/1200
1000/1200
VDRM +100
VRRM +100
V
V
Non repetitive peak reverse voltage
TO-220A/ TO-220F
V
(TC=85℃)
TO-220B/ TO-220C
RMS on-state current
IT(RMS)
25
A
(TC=100℃)
Non repetitive surge peak on-state current
(tp=10ms)
I2t value for fusing (tp=10ms)
ITSM
I2t
300
450
50
A
A2s
A/μs
A
Critical rate of rise of on-state current
(IG=2×IGT)
dI/dt
IGM
Peak gate current
4
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JCT1025/1225 Series
JieJie Microelectronics CO. , Ltd
Average gate power dissipation
Peak gate power
PG(AV)
PGM
1
5
W
W
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)
Value
Symbol
Test Condition
Unit
MIN.
TYP.
MAX.
40
1.3
-
IGT
VGT
VGD
IL
-
-
-
-
-
-
-
mA
V
VD=12V RL=33Ω
-
0.2
-
VD=VDRM Tj=125℃ RL=3.3KΩ
IG=1.2IGT
V
90
50
-
mA
mA
V/μs
IH
IT=500mA
-
dV/dt
VD=2/3VDRM Gate Open Tj=125℃
1000
STATIC CHARACTERISTICS
Symbol
Parameter
Value(MAX)
Unit
V
VTM
IDRM
IRRM
ITM=50A tp=380μs
Tj=25℃
1.6
10
4
Tj=25℃
μA
mA
VD=VDRM VR=VRRM
Tj=125℃
THERMAL RESISTANCES
Symbol
Parameter
Value
1.9
Unit
TO-220A/ TO-220F
TO-220B/ TO-220C
Rth(j-c)
junction to case(AC)
℃/W
1.0
TEL：+86-513-83639777
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JCT1025/1225 Series
JieJie Microelectronics CO. , Ltd
ORDERING INFORMATION
J CT 12 25 B
A:TO-220A B:TO-220B
C:TO-220C F:TO-220F
JieJie Microelectronics Co.,Ltd
SCRs
IT(RMS):25A
10:VDRM /VRRM ≥1000V
12:VDRM /VRRM ≥1200V
PACKAGE MECHANICAL DATA
Dimensions
Ref.
Millimeters
Inches
Typ.
Typ.
Min.
4.40
0.61
0.46
1.21
2.40
8.60
9.80
6.55
Max.
4.60
0.88
0.70
1.32
2.72
9.70
10.4
6.95
Min.
0.173
0.024
0.018
0.048
0.094
0.339
0.386
0.258
Max.
0.181
0.035
0.028
0.052
0.107
0.382
0.409
0.274
A
B
E
A
ax 3.8mm
M
Φ
C2
C
C2
C3
D
V1
E
C3
C
F
L2
2.54
3.75
0.1
G
28.0
29.8
H
1.102
1.173
0.148
L1
L2
L3
V1
B
1.14
2.65
1.70
2.95
0.045
0.104
0.067
0.116
G
TO-220A
45°
45°
TEL：+86-513-83639777
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JCT1025/1225 Series
JieJie Microelectronics CO. , Ltd
PACKAGE MECHANICAL DATA
Dimensions
Ref.
Millimeters
Typ.
Inches
Typ.
Min.
4.40
0.61
0.46
1.21
2.40
8.60
9.60
6.20
Max.
4.60
0.88
0.70
1.32
2.72
9.70
10.4
6.60
Min.
0.173
0.024
0.018
0.048
0.094
0.339
0.378
0.244
Max.
0.181
0.035
0.028
0.052
0.107
0.382
0.409
0.260
A
B
E
A
C2
C
C2
C3
D
E
JIE
C3
C
F
L2
B
2.54
3.75
0.1
G
28.0
29.8
H
1.102
1.173
0.148
L1
L2
L3
V1
1.14
2.65
1.70
2.95
0.045
0.104
0.067
0.116
G
45°
45°
TO-220B
Dimensions
Ref.
Millimeters
Typ.
Inches
Typ.
Min.
4.40
0.70
0.45
1.23
2.20
8.90
9.90
6.30
Max.
Min.
0.173
0.028
0.018
0.048
0.087
0.350
0.390
0.248
Max.
0.181
0.035
0.024
0.052
0.102
0.390
0.406
0.272
E
A
4.60
0.90
0.60
1.32
2.60
9.90
10.3
6.90
A
B
C2
C
C2
C3
D
E
C3
F
L2
2.54
3.39
0.1
G
28.0
29.8
H
1.102
1.173
0.133
L1
L2
L3
Φ
B
C
G
1.14
2.65
1.70
2.95
0.045
0.104
0.067
0.116
3.6
0.142
TO-220C
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JCT1025/1225 Series
JieJie Microelectronics CO. , Ltd
PACKAGE MECHANICAL DATA
Dimensions
Ref.
Millimeters
Typ.
Inches
Typ.
m
5m
Min.
4.40
0.74
0.48
2.40
2.60
8.80
9.70
6.40
Max.
4.80
0.83
0.75
2.70
3.00
9.30
10.3
7.00
Min.
0.173
0.029
0.019
0.094
0.102
0.346
0.382
0.252
Max.
A
3.
0.189
A
B
Max
E
C2
Φ
0.80
0.031 0.033
0.030
0.106
0.118
0.366
0.406
0.276
0.1
C
C2
C3
D
E
C3
F
L2
B
2.54
3.63
G
28.0
1.14
29.8
1.70
H
1.102
0.045
1.173
0.143
0.067
0.130
45°
L1
L2
L3
V1
C
G
3.30
45°
TO-220F
FIG.1 Maximum power dissipation versus RMS
FIG.2: RMS on-state current versus case
on-state current
temperature
IT(RMS) (A)
30
P(w)
36
α=180°
25
30
24
18
TO-220B/
TO-220C
20
15
10
TO-220A/
TO-220F
12
6
0
5
0
IT(RMS) (A)
Tc (℃)
0
5
10
15
20
25
0
25
50
75
100
125
FIG.3: Surge peak on-state current versus
FIG.4: On-state characteristics (maximum
number of cycles
values)
ITM (A)
ITSM (A)
300
350
300
250
tp=10ms
One cycle
100
200
150
10
1
100
50
0
Tj=125℃
Tj=25℃
VTM (V)
Number of cycles
100
0
1
2
3
4
5
1
10
1000
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JCT1025/1225 Series
JieJie Microelectronics CO. , Ltd
FIG.5: Non-repetitive surge peak on-state current
FIG.6: Relative variations of gate trigger
current, holding current and latching current
versus junction temperature
for a sinusoidal pulse with width tp<10ms, and
2
corresponging value of I t (dI/dt < 50A/μs)
2
ITSM (A), I2t (A s)
IGT,IH,IL(Tj)/IGT,IH,IL(Tj=25℃)
3.0
3000
ITSM
2.5
1000
2.0
IGT
I2t
1.5
dI/dt
100
IH&IL
1.0
0.5
Tj(℃)
tp(ms)
0.0
-40 -20
10
0.01
0
20
40
60
80 100 120 140
0.1
1
10
Information furnished in this document is believed to be accurate and reliable.
However, Jiangsu JieJie Microelectronics Co.,Ltd assumes no responsibility for the
consequences of use without consideration for such information nor use beyond it.
Information mentioned in this document is subject to change without notice, apart
from that when an agreement is signed, Jiangsu JieJie complies with the agreement.
Products and information provided in this document have no infringement of patents.
Jiangsu JieJie assumes no responsibility for any infringement of other rights of third
parties which may result from the use of such products and information.
This document is the second version which is made in 20-Nov.-2014. This document
supersedes and replaces all information previously supplied.
is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd.
Copyright ©2014 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved.
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