JME035-18 [JIEJIE]

Chip - double mesa SCRs of reverse blocking high-voltage 2) Chip;


型号：	JME035-18
厂家：	JIEJIE MICROELECTRONICS CO.,Ltd
描述：	Chip - double mesa SCRs of reverse blocking high-voltage 2) Chip
文件：	总3页 (文件大小：176K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

JIEJIE MICROELECTRONICS CO.,Ltd

JME035-16/18/20

Description:

1) Chip: double mesa SCRs of reverse blocking high-voltage

2) Chip area: 7.0mm×6.3mm (corner gate thyristor)

3) Technology: mesa glass passivation technology, multilayer metallization

technology and non-void welding by vacuum welding technology

Typical Application:

Reactive power compensation, solid state relay, power module, etc.

Absolute Maximum Ratings (Packaged into modules, unless otherwise specified, T_C=25℃)

Parameter

Test Conditions

Symbol

T_j

Values

-40-125

Unit

℃

Operating junction temperature range

Repetitive peak off-state voltage

Repetitive peak reverse voltage

Average on-state current

T_j=25℃

T_C=80℃

tp=10ms

V_DRM

V_RRM

I_T(AV)

I_TSM

1600/1800/2000

Peak on-state surge current

I²t value for fusing

550

I²t

1500

A²s

V_D=2/3V_DRMI_G=0.3A

T_j=125℃ tp=200μs

dI_G/dt=0.3A/μs

Critical rate of rise of on-state current

dI/dt

150

A/μs

Electrical Characteristics (Packaged into modules, unless otherwise specified, T_C=25℃)

Parameter

Peak on-state voltage

Test Conditions

Symbol

Values

Unit

I_T=110A tp=380μs

V_TM

≤1.8

V_D=V_DRM

T_C=25℃

T_C=125℃

V_R=V_RRM

T_C=25℃

T_C=125℃

Repetitive peak off-state current

Repetitive peak reverse current

I_DRM1

I_DRM2

≤10

≤8

μA

I_RRM1

I_RRM2

I_GT

≤10

≤8

μA

Triggering gate current

Latching current

V_D=12V R_L=30Ω

10-60

≤150

≤120

≤2

I_G=1.2 I_GT

I_L

Holding current

I_T=1A

I_H

V_D=12V R_L=30Ω

Triggering gate voltage

V_GT

TEL：+86-513-83639777

-1/3-

http://www.jjwdz.com

JIEJIE MICROELECTRONICS CO.,Ltd

V_D=V_DRMT_j=125℃

Non triggering gate voltage

V_GD

≥0.25

V_D=2/3V_DRM

T_j=125℃

Critical rate of rise of voltage

dV/dt

≥1000

V/μs

Gate Open

Mechanical Characteristics

Module size

7.5 mm×8.2 mm

1.6 mm

Module thickness

4.64 mm×3.55 mm×2.85 mm

1 mm×1 mm

Welding area of cathode electrode

Welding area of control electrode

symbol

Working Conditions

1) No severe mechanical shock as impact and drop off in the process of transportation, storage and

working of product.

2) Storage conditions

Temperature: 5~40℃

Relative humidity: ≤45%

Storage time: 3 days for the open package; 3 months for the closed package

3) Welding conditions

Recommended solder component: Sn63Sb37 (or lead-free solder of liquid quadrant less than 240℃)

Recommended soldering conditions: shown in Table 1

4) Welding in the gate spot is recommended to be completed one-time by using fixture. If it is

necessary to use a soldering iron, the temperature of soldering iron is controlled within 280℃ and time

is controlled within 20s.

TEL：+86-513-83639777

-2/3-

http://www.jjwdz.com

JIEJIE MICROELECTRONICS CO.,Ltd

Table 1

Sn63Sb37 Soldering conditions

Average heating rate

3℃/s (Max)

Low limit of temperature

TS(Min)

100℃

Preheating activation Upper limit of temperature TS(Max) 150℃

Time (min ~ max)

60 ~ 90s

Melting point temperature

Peak temperature

183℃ (Sn63Sb37)

240℃ (+0/-5℃)

Reflow zone

Reflow time

10～30s

(Peak temperature ±5℃)

Melting time

40～60s

3.5℃/s

Maximum cooling rate

Recommended process time

300 ~ 360s

Sn63Pb37

250℃

(10-30S)

200℃

Ts(max)

(40-60S)

150℃

Ts(min)

100℃

60-90S

Ordering Information

J M E 035 -16

JieJie Microelectronics Co.,Ltd

16:VDRM/VRRM≥1600V

18:VDRM/VRRM≥1800V

20:VDRM/VRRM≥2000V

Module of series

E:Edge and corner gate

IT(AV)=35A

TEL：+86-513-83639777

-3/3-

http://www.jjwdz.com

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