JST136B-800C [JIEJIE]
4A TRIACs;
| 型号： | JST136B-800C |
| 厂家： | 
JIEJIE MICROELECTRONICS CO.,Ltd |
| 描述： | 4A TRIACs 三端双向交流开关 |
| 文件： | 总7页 (文件大小：402K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIEJIE MICROELECTRONICS CO. , Ltd
JST136 Series 4A TRIACs
Rev.3.0
DESCRIPTION:
2
JST136 series triacs with low holding and latching
current are especially recommended for use on
middle and small resistance type power load.
JST136F provides insulation voltage rated at 2000V
RMS from all three terminals to external heatsink
complying with UL standards (File ref: E252906).
1
1
3
2
3
TO-252
TO-251
1
1
2
2
3
TO-220C
TO-220B
Non-Insulated
3
T1(1)
G(3)
MAIN FEATURES
Symbol
IT(RMS)
Value
4
Unit
A
1
2
3
TO-220F
Insulated
T2(2)
VDRM/VRRM
600 and 800
V
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Tstg
Value
Unit
Storage junction temperature range
Operating junction temperature range
-40-150
-40-125
600/800
600/800
℃
℃
V
Tj
Repetitive peak off-state voltage(Tj=25℃)
Repetitive peak reverse voltage(Tj=25℃)
Non repetitive surge peak Off-state voltage
Non repetitive peak reverse voltage
VDRM
VRRM
VDSM
VRSM
V
VDRM + 100
VRRM + 100
V
V
TO-251/ TO-252
(TC=110℃)
TO-220B(Non-Ins)/
TO-220C(TC=107℃)
RMS on-state current
IT(RMS)
4
A
TO-220F(Ins)
(TC=90℃)
Non repetitive surge peak on-state current
(full cycle, F=50Hz)
I2t value for fusing (tp=10ms)
ITSM
I2t
25
A
3.1
50
10
A2s
Ⅰ-Ⅱ-Ⅲ
Critical rate of rise of on-state
dI/dt
A/μs
current (IG=2×IGT)
Ⅳ
TEL：+86-513-83639777
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JST136 Series
JieJie Microelectronics CO. , Ltd
Peak gate current
IGM
PG(AV)
PGM
2
0.5
5
A
Average gate power dissipation
Peak gate power
W
W
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)
Value
Symbol
Test Condition
Quadrant
Unit
D
5
E
F
Ⅰ-Ⅱ-Ⅲ
Ⅳ
10
25
1.5
25
70
IGT
MAX
mA
VD=12V
10
VGT
VGD
ALL
MAX
MIN
V
V
VD=VDRM Tj=125℃
RL=3.3KΩ
ALL
0.2
Ⅰ-Ⅲ-Ⅳ
20
35
15
5
30
45
25
50
0.5
40
60
30
50
5
IL
MAX
mA
IG=1.2IGT
Ⅱ
IH
IT=100mA
MAX
MIN
MIN
mA
V/μs
V/μs
dV/dt
VD=2/3VDRM Gate Open Tj=125℃
(dV/dt)c (dI/dt)c=1.7A/ms Tj=125℃
0.1
STATIC CHARACTERISTICS
Symbol
VTM
Parameter
Value(MAX)
Unit
V
ITM=5.5A tp=380μs
Tj=25℃
1.7
10
1
IDRM
Tj=25℃
μA
mA
VD=VDRM VR=VRRM
IRRM
Tj=125℃
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
TO-251/ TO-252
4.0
TO-220B(Non-Ins)/
TO-220C
Rth(j-c)
junction to case(AC)
3.0
3.3
℃/W
TO-220F(Ins)
TEL：+86-513-83639777
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JST136 Series
JieJie Microelectronics CO. , Ltd
ORDERING INFORMATION
J ST 136 B -600 E
JieJie Microelectronics Co.,Ltd
T:IGT1-4≤5mA
D:IGT1-3≤5mA IGT4≤10mA
E:IGT1-3≤10mA IGT4≤25mA
C:IGT1-3≤25mA IGT4≤50mA
TRIACs
IT(RMS):4A
C:TO-220C
F:TO-220F(Ins)
B:TO-220B(Non-Ins)
H:TO-251 K:TO-252
600:VDRM/VRRM≥600V
800:VDRM/VRRM≥800V
PACKAGE MECHANICAL DATA
Dimensions
Ref.
Millimeters
Inches
Typ.
Typ.
Min.
4.40
0.61
0.46
1.21
2.40
8.60
9.60
6.20
Max.
4.60
0.88
0.70
1.32
2.72
9.70
10.4
6.60
Min.
0.173
0.024
0.018
0.048
0.094
0.339
0.378
0.244
Max.
0.181
0.035
0.028
0.052
0.107
0.382
0.409
0.260
A
B
E
A
C2
C
C2
C3
D
E
JIE
C3
F
L2
B
2.54
3.75
0.1
G
28.0
29.8
H
1.102
1.173
0.148
L1
L2
L3
V1
1.14
2.65
1.70
2.95
0.045
0.104
0.067
0.116
G
C
45°
45°
TO-220B Non-Ins
TEL：+86-513-83639777
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JST136 Series
JieJie Microelectronics CO. , Ltd
PACKAGE MECHANICAL DATA
Dimensions
Ref.
Millimeters
Typ.
Inches
Typ.
Min.
2.20
0.90
0.55
5.10
0.76
0.45
0.48
6.00
6.40
Max.
2.40
1.20
0.65
5.40
0.85
0.62
0.62
6.20
6.70
Min.
0.086
0.035
0.022
0.200
0.030
0.018
0.019
0.236
0.252
Max.
0.095
0.047
0.026
0.213
0.033
0.024
0.024
0.244
0.264
A
A2
B
E
B2
A
C2
B2
B3
C
C2
D
B3
B
E
2.30
0.091
G
16.0
8.90
1.80
1.37
17.0
9.40
1.90
1.50
H
0.630
0.350
0.071
0.054
0.669
0.370
0.075
0.059
L
G
C
L1
L2
V1
A2
4°
4°
TO-251
Dimensions
Ref.
Millimeters
Typ.
Inches
Typ.
Min.
2.20
0.03
0.55
5.10
0.45
0.48
6.00
6.40
4.40
9.35
1.30
1.37
Max.
Min.
0.086
0.001
0.022
0.200
0.018
0.019
0.236
0.252
0.173
0.368
0.051
0.054
Max.
0.095
0.009
0.026
0.213
0.024
0.024
0.244
0.264
0.185
0.417
0.067
0.059
2.40
0.23
0.65
5.40
0.62
0.62
6.20
6.70
4.70
10.6
1.70
1.50
A
A2
B
E
A
B2
C2
B2
C
C2
D
E
B
C
G
G
H
A2
L1
L2
V1
V2
4°
4°
0°
8°
0°
8°
TO-252
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JST136 Series
JieJie Microelectronics CO. , Ltd
PACKAGE MECHANICAL DATA
Dimensions
Ref.
Millimeters
Typ.
Inches
Typ.
Min.
4.40
0.70
0.45
1.23
2.20
8.90
9.90
6.30
Max.
4.60
0.90
0.60
1.32
2.60
9.90
10.3
6.90
Min.
0.173
0.028
0.018
0.048
0.087
0.350
0.390
0.248
Max.
0.181
0.035
0.024
0.052
0.102
0.390
0.406
0.272
E
A
A
B
C2
C
C2
C3
D
E
C3
C
F
L2
2.54
3.39
0.1
G
28.0
29.8
H
1.102
1.173
0.133
L1
L2
L3
Φ
B
G
1.14
2.65
1.70
2.95
0.045
0.104
0.067
0.116
3.6
0.142
TO-220C
Dimensions
Ref.
Millimeters
Typ.
Inches
Typ.
Min.
4.40
0.74
0.48
2.40
2.60
8.80
9.70
6.40
Max.
Min.
0.173
0.029
0.019
0.094
0.102
0.346
0.382
0.252
Max.
.5mm
A
4.80
0.83
0.75
2.70
3.00
9.30
10.3
7.00
0.189
A
B
Max 3
E
C2
Φ
0.80
0.031 0.033
0.030
0.106
0.118
0.366
0.406
0.276
0.1
C
C2
C3
D
E
C3
F
L2
B
2.54
3.63
G
28.0
1.14
29.8
1.70
H
1.102
0.045
1.173
0.143
0.067
0.130
45°
L1
L2
L3
V1
C
G
3.30
45°
TO-220F Ins
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JST136 Series
JieJie Microelectronics CO. , Ltd
FIG.1 Maximum power dissipation versus RMS
FIG.2: RMS on-state current versus case
on-state current
temperature
IT(RMS) (A)
6
P(w)
6
α=180°
5
5
4
TO-220C/
TO-220B(Non-Ins)
TO-251/
TO-252
4
3
2
3
2
TO-220F(Ins)
1
1
0
IT(RMS) (A)
Tc (℃)
0
0
1
2
3
4
5
0
25
50
75
100
125
FIG.3: Surge peak on-state current versus
FIG.4: On-state characteristics (maximum
number of cycles
values)
ITM (A)
ITSM (A)
30
28
24
20
16
12
8
t=20ms
One cycle
Tj=Tjmax
10
1
Tj=25℃
4
0
VTM (V)
Number of cycles
100
0.1
0
1
2
3
4
5
1
10
1000
FIG.5: Non-repetitive surge peak on-state current
FIG.6: Relative variations of gate trigger current
for a sinusoidal pulse with width tp<20ms and
versus junction temperature
2
corresponding value of I t (Ⅰ-Ⅱ-Ⅲ:dI/dt < 50A/μs;
Ⅳ:dI/dt < 10A/μs)
ITSM (A), I2t (A2s)
IGT(Tj)/IGT(Tj=25℃)
3.5
300
3.0
2.5
ITSM
100
IGT3
IGT1
dI/dt(Ⅰ-Ⅱ-Ⅲ)
dI/dt(Ⅳ)
IGT4
2.0
1.5
10
1
1.0
0.5
0.0
2
I t
IGT2
Tj(℃)
40 60
tp(ms)
-40 -20
0
20
80
100 120 140
0.01
0.1
1
10 20
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JST136 Series
JieJie Microelectronics CO. , Ltd
FIG.7: Relative variations of holding current
FIG.8: Relative variations of latching current
versus junction temperature
versus junction temperature
IH(Tj)/IH(Tj=25℃)
IL(Tj)/IL(Tj=25℃)
3.0
3.5
3.0
IL4
2.5
2.5
2.0
2.0
1.5
IH1&IH3
1.5
IL1&IL2&IL3
1.0
0.5
1.0
0.5
Tj(℃)
Tj(℃)
0.0
-40 -20
0.0
-40 -20
0
20
40
60
80
100 120 140
0
20
40
60
80
100 120 140
Information furnished in this document is believed to be accurate and reliable.
However, Jiangsu JieJie Microelectronics Co.,Ltd assumes no responsibility for the
consequences of use without consideration for such information nor use beyond it.
Information mentioned in this document is subject to change without notice, apart
from that when an agreement is signed, Jiangsu JieJie complies with the agreement.
Products and information provided in this document have no infringement of patents.
Jiangsu JieJie assumes no responsibility for any infringement of other rights of third
parties which may result from the use of such products and information.
This document is the third version which is made in 10-June-2015. This document
supersedes and replaces all information previously supplied.
is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd.
Copyright © 2015 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved.
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