JST24F-800BW [JIEJIE]
25A TRIACs;
| 型号： | JST24F-800BW |
| 厂家： | 
JIEJIE MICROELECTRONICS CO.,Ltd |
| 描述： | 25A TRIACs 局域网 三端双向交流开关 |
| 文件： | 总6页 (文件大小：431K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIEJIE MICROELECTRONICS CO. , Ltd
JST24 Series
25A TRIACs
Rev.3.0
DESCRIPTION:
JST24 series triacs, with high ability to withstand
the shock loading of large current, provide high
dv/dt rate with strong resistance to electromagnetic
interface. With high commutation performances,
3 quadrants products especially recommended for
use on inductive load.
TO-220A
Insulated
TO-220B
Non-Insulated
1
1
2
2
3
3
1
2
JST24A provides insulation voltage rated at 2500V
RMS and JST24F provides insulation voltage rated
at 2000V RMS from all three terminals to external
heatsink complying with UL standards (File ref:
E252906).
1
TO-220F
Insulated
3
2
3
TO-263
T1(1)
G(3)
MAIN FEATURES
Symbol
IT(RMS)
Value
25
Unit
A
T2(2)
VDRM /VRRM 600 and 800 and 1200
V
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Tstg
Value
Unit
℃
℃
V
Storage junction temperature range
Operating junction temperature range
Repetitive peak off-state voltage (Tj=25℃)
Repetitive peak reverse voltage (Tj=25℃)
-40-150
-40-125
Tj
VDRM
VRRM
VDSM
VRSM
600/800/1200
600/800/1200
VDRM +100
V
Non repetitive surge peak Off-state voltage
Non repetitive peak reverse voltage
V
VRRM +100
V
TO-220A(Ins)/
TO-220F(Ins) (TC=75℃)
TO-220B(Non-Ins)
(TC=90℃)
RMS on-state
current
IT(RMS)
25
A
TO-263 (TC=100℃)
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JST24 Series
JieJie Microelectronics CO. , Ltd
Non repetitive surge peak on-state current
(full cycle, F=50Hz)
I2t value for fusing (tp=10ms)
ITSM
I2t
250
340
50
A
A2s
A/μs
Critical rate of rise of on-state current
(IG =2×IGT)
dI/dt
Peak gate current
IGM
PG(AV)
PGM
4
1
A
Average gate power dissipation
Peak gate power
W
W
10
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)
VDRM /VRRM: 600/800V
JST24-600/800V
Symbol
Test Condition
Quadrant
Unit
BW
CW
IGT
Ⅰ-Ⅱ-Ⅲ
Ⅰ-Ⅱ-Ⅲ
MAX
MAX
50
35
mA
V
VD =12V RL =33Ω
VGT
1.3
0.2
VD =VDRM Tj =125℃
RL =3.3KΩ
VGD
Ⅰ-Ⅱ-Ⅲ
MIN
V
Ⅰ-Ⅲ
80
100
75
70
80
IL
MAX
mA
IG =1.2IGT
Ⅱ
IH
IT =100mA
MAX
MIN
MIN
50
mA
V/μs
V/μs
dV/dt
VD=2/3VDRM Gate Open Tj =125℃
1000
22
500
13
(dV/dt)c Without snubber Tj=125℃
VDRM /VRRM: 1200V
JST24-1200V
Symbol
Test Condition
Quadrant
Unit
BW
CW
IGT
Ⅰ-Ⅱ-Ⅲ
Ⅰ-Ⅱ-Ⅲ
MAX
MAX
50
35
mA
V
VD =12V RL=33Ω
VGT
1.5
0.2
VD =VDRM Tj =125℃
RL =3.3KΩ
VGD
Ⅰ-Ⅱ-Ⅲ
MIN
V
Ⅰ-Ⅲ
90
100
80
70
80
60
IL
MAX
MAX
mA
mA
IG =1.2IGT
Ⅱ
IH
IT =100mA
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JST24 Series
JieJie Microelectronics CO. , Ltd
dV/dt
VD=2/3VDRM Gate Open Tj=125℃
MIN
MIN
1500
30
1000
20
V/μs
V/μs
(dV/dt)c Without snubber Tj=125℃
STATIC CHARACTERISTICS
Symbol
VTM
Parameter
Value(MAX)
Unit
V
ITM =35A tp=380μs
Tj=25℃
1.5
5
IDRM
Tj=25℃
μA
mA
VD =VDRM VR =VRRM
IRRM
Tj=125℃
3
THERMAL RESISTANCES
Symbol
Parameter
Value
3.9
Unit
TO-220A(Ins)
TO-220B(Non-Ins)
TO-220F(Ins)
TO-263
1.2
Rth(j-c)
junction to case(AC)
℃/W
3.3
0.85
ORDERING INFORMATION
J ST 24 A -600 BW
JieJie Microelectronics Co.,Ltd
BW:IGT3≤50mA
CW:IGT3≤35mA
Triacs
IT(RMS):25A
E:TO-263
600:VDRM /VRRM≥600V
800:VDRM /VRRM≥800V
1200:VDRM /VRRM≥1200V
A:TO-220A(Ins)
F:TO-220F(Ins)
B:TO-220B(Non-Ins)
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JST24 Series
JieJie Microelectronics CO. , Ltd
PACKAGE MECHANICAL DATA
Dimensions
Ref.
Millimeters
Typ.
Inches
Typ.
Min.
4.40
0.61
0.46
1.21
2.40
8.60
9.80
6.55
Max.
4.60
0.88
0.70
1.32
2.72
9.70
10.4
6.95
Min.
0.173
0.024
0.018
0.048
0.094
0.339
0.386
0.258
Max.
0.181
0.035
0.028
0.052
0.107
0.382
0.409
0.274
.8mm
x 3
A
B
E
A
Ma
Φ
C2
C
C2
C3
D
E
C3
C
F
L2
2.54
3.75
0.1
G
28.0
29.8
H
1.102
1.173
0.148
L1
L2
L3
V1
B
1.14
2.65
1.70
2.95
0.045
0.104
0.067
0.116
G
45°
45°
TO-220A Ins
Dimensions
Ref.
Millimeters
Typ.
Inches
Typ.
Min.
4.40
0.61
0.46
1.21
2.40
8.60
9.60
6.20
Max.
4.60
Min.
0.173
0.024
0.018
0.048
0.094
0.339
0.378
0.244
Max.
0.181
0.035
0.028
0.052
0.107
0.382
0.409
0.260
A
B
E
A
0.88
0.70
1.32
2.72
9.70
10.4
6.60
C2
C
C2
C3
D
E
JIE
C3
C
F
L2
B
2.54
3.75
0.1
G
28.0
29.8
H
1.102
1.173
0.148
L1
L2
L3
V1
1.14
2.65
1.70
2.95
0.045
0.104
0.067
0.116
G
45°
45°
TO-220B Non-Ins
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JST24 Series
JieJie Microelectronics CO. , Ltd
PACKAGE MECHANICAL DATA
Dimensions
Ref.
Millimeters
Typ.
Inches
Typ.
Min.
4.40
0.74
0.48
2.40
2.60
8.80
9.70
6.40
Max.
4.80
0.83
0.75
2.70
3.00
9.30
10.3
7.00
Min.
0.173
0.029
0.019
0.094
0.102
0.346
0.382
0.252
Max.
.5mm
A
0.189
A
B
Max 3
E
C2
Φ
0.80
0.031 0.033
0.030
0.106
0.118
0.366
0.406
0.276
0.1
C
C2
C3
D
E
C3
F
L2
2.54
3.63
G
28.0
1.14
29.8
1.70
H
1.102
0.045
1.173
0.143
0.067
0.130
45°
L1
L2
L3
V1
B
C
G
3.30
45°
TO-220F Ins
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JST24 Series
JieJie Microelectronics CO. , Ltd
FIG.1: Maximum power dissipation versus RMS
FIG.2: RMS on-state current versus case
on-state current
temperature
IT(RMS) (A)
30
P(w)
36
α=180°
TO-220B(Non-Ins)
25
27
18
9
TO-263
TO-220A(Ins)/
TO-220F(Ins)
20
15
10
5
Tc (℃)
IT(RMS) (A)
0
0
0
0
5
10
15
20
25
25
50
75
100
125
FIG.3: Surge peak on-state current versus
FIG.4: On-state characteristics (maximum
number of cycles
values)
ITM (A)
ITSM (A)
200
300
240
180
t=20ms
One cycle
100
Tj=125℃
10
1
120
60
0
Tj=25℃
VTM (V)
Number of cycles
10 100
0
1
2
3
4
5
1
1000
FIG.6: Relative variations of gate trigger current,
holding current and latching current versus
junction temperature
FIG.5: Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp<10ms, and
corresponging value of I2t (dI/dt < 50A/μs)
2
ITSM (A), I2t (A s)
IGT,IH,IL(Tj) /IGT,IH,IL(Tj=25℃)
3.0
4000
2.5
2.0
ITSM
IGT
1000
dI/dt
1.5
1.0
IH&IL
I2t
0.5
0.0
Tj (℃)
40 60
tp(ms)
100
0.01
-40 -20
0
20
80 100 120 140
0.1
1
10 20
Information furnished in this document is believed to be accurate and reliable.
However, Jiangsu JieJie Microelectronics Co.,Ltd assumes no responsibility for the
consequences of use without consideration for such information nor use beyond it.
Information mentioned in this document is subject to change without notice, apart from
that when an agreement is signed, Jiangsu JieJie complies with the agreement.
Products and information provided in this document have no infringement of patents.
Jiangsu JieJie assumes no responsibility for any infringement of other rights of third
parties which may result from the use of such products and information.
This document is the third version which is made in 20-July-2015. This document
supersedes and replaces all information previously supplied.
is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd.
Copyright © 2015 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved.
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