JST41Z-1200B [JIEJIE]

40A TRIACs;


型号：	JST41Z-1200B
厂家：	JIEJIE MICROELECTRONICS CO.,Ltd
描述：	40A TRIACs 三端双向交流开关
文件：	总6页 (文件大小：503K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

JIEJIE MICROELECTRONICS CO. , Ltd

JST41 Series

40A TRIACs

Rev.4.0

DESCRIPTION:

JST41 series triacs, with high ability to withstand

the shock loading of large current, provide high

dv/dt rate with strong resistance to electromagnetic

interface. With high commutation performances, 3

quadrants products especially recommended for use

on inductive load.

TO-3P

Insulated

TO-247

JST41Z provides insulation voltage rated at 2500V

RMS from all three terminals to external heatsink

complying with UL standards (File ref: E252906).

MAIN FEATURES

Symbol

I_T(RMS)

Value

Unit

V_DRM/V_RRM600 and 800 and 1200 and 1600

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

T_stg

Value

Unit

℃

Storage junction temperature range

Operating junction temperature range

Repetitive peak off-state voltage (T_j=25℃)

Repetitive peak reverse voltage (T_j=25℃)

Non repetitive surge peak Off-state voltage

Non repetitive peak reverse voltage

-40-150

-40-125

T_j

V_DRM

V_RRM

V_DSM

V_RSM

600/800/1200/1600

V_DRM+100

V_RRM+100

TO-3P(Ins) (T_C=80℃)

RMS on-state

current

I_T(RMS)

TO-247/ TG-C

(T_C=90℃)

Non repetitive surge peak on-state current

(full cycle, F=50Hz)

I²t value for fusing (tp=10ms)

I_TSM

I²t

400

880

A²s

A/μs

Critical rate of rise of on-state current

(I_G=2×I_GT)

dI/dt

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JST41 Series

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Peak gate current

I_GM

P_G(AV)

P_GM

Average gate power dissipation

Peak gate power

ELECTRICAL CHARACTERISTICS (T_j=25℃ unless otherwise specified)

3 Quadrants

Symbol

I_GT

Test Condition

Quadrant

Ⅰ-Ⅱ-Ⅲ

Value

Unit

MAX

V_D=12V R_L=33Ω

V_GT

1.3

V_D=V_DRMT_j=125℃

R_L=3.3KΩ

V_GD

Ⅰ-Ⅱ-Ⅲ

MIN

0.2

Ⅰ-Ⅲ

100

I_L

MAX

I_G=1.2I_GT

Ⅱ

I_H

I_T=100mA

MAX

MIN

V/μs

V_D=2/3V_DRMGate Open

T_j=125℃

dV/dt

1000

(dV/dt)c Without snubber T_j=125℃

4 Quadrants

Symbol

Test Condition

Quadrant

Ⅰ-Ⅱ-Ⅲ

Ⅳ

Value

Unit

I_GT

MAX

V_D=12V R_L=33Ω

V_GT

V_GD

ALL

MAX

MIN

1.5

V_D=V_DRMT_j=125℃

R_L=3.3KΩ

ALL

0.2

Ⅰ-Ⅲ-Ⅳ

100

I_L

MAX

I_G=1.2I_GT

Ⅱ

I_H

I_T=100mA

MAX

MIN

V/μs

V_D=2/3V_DRMGate Open

dV/dt

500

T_j=125℃

(dV/dt)c Without snubber T_j=125℃

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STATIC CHARACTERISTICS

Symbol

Parameter

I_TM=60A tp=380μs

Value(MAX)

Unit

V_TM

I_DRM

I_RRM

T_j=25℃

T_j=125℃

1.55

μA

V_D=V_DRMV_R=V_RRM

THERMAL RESISTANCES

Symbol

Parameter

Value

0.9

Unit

TO-3P(Ins)

R_th(j-c)

junction to case(AC)

℃/W

TO-247/ TG-C

0.8

ORDERING INFORMATION

J ST 41 Z -600 BW

BW:IGT3≤50mA

B:IGT1-3≤50mA IGT4≤70mA

600:VDRM /VRRM≥600V

JieJie Microelectronics Co.,Ltd

Triacs

IT(RMS):40A

800:VDRM /VRRM≥800V

1200:VDRM /VRRM≥1200V

1600:VDRM /VRRM≥1600V

Z:TO-3P(Ins)

S:TO-247 T:TG-C

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JST41 Series

JieJie Microelectronics CO. , Ltd

PACKAGE MECHANICAL DATA

Dimensions

Ref.

Millimeters

Typ.

Inches

Typ.

Min.

4.40

1.45

14.35

0.50

2.70

15.80

20.40

15.10

5.40

1.10

1.35

2.80

Max.

4.60

1.55

Min.

0.173

0.057

Max.

0.181

0.061

0.614

0.028

0.114

0.650

0.831

0.610

0.222

0.055

0.059

0.118

15.60 0.565

0.70

2.90

0.020

0.106

16.50 0.622

21.10 0.803

15.50 0.594

5.65

1.40

1.50

3.00

0.213

0.043

0.053

0.110

4.35

0.171

TO-3P Ins

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JST41 Series

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PACKAGE MECHANICAL DATA

MARKING

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JST41 Series

JieJie Microelectronics CO. , Ltd

FIG.1 Maximum power dissipation versus RMS

FIG.2: RMS on-state current versus case

on-state current

temperature

IT(RMS) (A)

P(w)

α=180°

TO-3P(Ins)

TG-C/

TO-247

IT(RMS) (A)

Tc (℃)

100

125

FIG.3: Surge peak on-state current versus

FIG.4: On-state characteristics (maximum

number of cycles

values)

ITM (A)

ITSM (A)

400

500

400

t=20ms

One cycle

Tj=125℃

100

300

200

100

Tj=25℃

VTM (V)

Number of cycles

10 100

1000

FIG.6: Relative variations of gate trigger current,

holding current and latching current versus

junction temperature

FIG.5: Non-repetitive surge peak on-state current

for a sinusoidal pulse with width tp<20ms, and

corresponging value of I²t (dI/dt < 50A/μs)

ITSM (A), I²t (A s)

IGT,IH,IL(Tj) /IGT,IH,IL(Tj=25℃)

3.0

10000

2.5

2.0

IGT

ITSM

I²t

1.5

1.0

IH&IL

1000

dI/dt

0.5

0.0

Tj (℃)

40 60

tp(ms)

-40 -20

80 100 120 140

0.01

0.1

10 20

Information furnished in this document is believed to be accurate and reliable. However,

Jiangsu JieJie Microelectronics Co.,Ltd assumes no responsibility for the

consequences of use without consideration for such information nor use beyond it.

Information mentioned in this document is subject to change without notice, apart from

that when an agreement is signed, Jiangsu JieJie complies with the agreement.

Products and information provided in this document have no infringement of patents.

Jiangsu JieJie assumes no responsibility for any infringement of other rights of third

parties which may result from the use of such products and information.

This document is the fourth version which is made in 9-June-2015. This document

supersedes and replaces all information previously supplied.

is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd.

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