EGP10B [JINANJINGHENG]

SUPER FAST RECTIFIER; 超快速整流器


型号：	EGP10B
厂家：	JINAN JINGHENG (GROUP) CO.,LTD
描述：	SUPER FAST RECTIFIER 超快速整流器二极管
文件：	总2页 (文件大小：84K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

EGP10ATHRU EGP10M

SUPER FAST RECTIFIER

Reverse Voltage: 50 to 1000 Volts

Forward Current:1.0Ampere

S E M I C O N D U C T O R

DO-41

FEATURES

GPRC( Glass Passivated Rectifier Chip) inside

Glass passivated cavity-free junction

Low forward voltage drop,High current capability

High surge current capability

1.0(25.4)

MIN

Super fast recovery time

0.107(2.7)

0.080(2.0)

DIA

Plastic package has Underwriters Laboratory Flammability

Classification 94V-0

0.205(5.20)

0.180(4.10)

MECHANICAL DATA

Case: JEDEC DO-41 molded plastic body

Terminals: Plated axial leads, solderable per MIL-STD-750,method 2026

Polarity: Color band denotes cathode end

Mounting Position: Any

1.0(25.4)

MIN

0.034(0.85)

0.028(0.71)

DIA

Weight: 0.012ounce, 0.34 gram

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(Rating at 25 C ambient temperature unless otherwise specified ,Single phase ,half wave ,60HZ,resistive or inductive

load. For capacitive load,derate current by 20%.)

EGP

10G

EGP

10A

EGP

10B

EGP

10D

EGP

10F

EGP

10J

EGP

10K

EGP

10M

Symbols

Units

600

280

600

100

150

105

150

200

140

200

400

280

400

800

280

800

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

VRRM

VRMS

VDC

1000

280

Volts

Maximum DC Blocking Voltage

100

1000

Maximum Average Forward Rectified Current

0.375"(9.5mm)lead Length at Ta=55 C

1.0

I(AV)

IFSM

Amp

Amps

Volts

Peak Forward Surge Current 8.3ms single half

sine-wave superimposed on rated load

(JEDEC method)

30.0

Maximum Instantaneous Forward Voltage

at 1.0 A

0.95

1.25

5.0

TA=25 C

Maximum DC Reverse

Current At Rated DC

Blocking Voltage

TA=100 C

Maximum Reverse Recovery Time(Note1)

Typical Junction Capacitance(Note2)

Trr

-65 to+125

-65 to+150

Operating Junction and Storage Temperature

Range

TSTG

Note: 1.Test conditions: IF=0.5A,IR=1.0A,IRR=0.25A.

2.Measured at 1MHZ and applied reverse voltage of 4.0 Volts.

8-4

NO.51 HEPING ROAD PR CHINA

TEL:86-531-6943657 FAX:86-531-6947096

WWW.JIFUSEMICON.COM

JINAN JINGHENG CO., LTD.

RATINGSAND CHARACTERISTIC CURVES EGP10A THRU EGP10M

FIG.1-TEST CIRCUIT DIAGRAM AND REVERSE

RECOVERY TIME CHARACTERISTIC

FIG.2-TYPICAL FORWARD CURRENT

DERATING CURVE

1.5

Trr

NON INDUCTIVE

Single Phase Half Wave 60hz

Resistive or Inductive Load

+0.5A

0.375"(9.5mm) Lead Length

1.0

(＋)

PULSE

GENERATOR

(NOTE2)

D.U.T.

50Vdc

(APPROX)

-0.25A

(－)

OSCILLOSCOPE

(NOTE1)

0.5

NON IN-

DUCTIVE

EGP10A-EGP10G

EGP10J-EGP10M

-1.0A

NOTES:1.Rise Time=7ns max. input impedance=1

megohm 22pF

1cm

100

125

150

175

SET TIME BASE FOR 5/10 ns/cm

2.Rise Time=10ns max. source impedance

=50 ohms

AMBIENT TEMPERATURE ( C)

FIG.3-TYPICAL INSTANTANEOUS FORWARD

CHARACTERISTICS

FIG.4-TYPICAL REVERSE CHARACTERISTICS

100

EGP10A-EGP10F

EGP10G

TJ=100 C

EGP10J-EGP10M

1.0

TA=25 C

0.1

Pulse Width=300

1% Duty Cycle

TJ=25 C

0.1

0.01

0.2

0.4

0.6

0.8

1.0

1.2

1.4

INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

0.01

100

120

140

PERCENT OF RATED PEAK REVERSE VOLTAGE(%)

FIG.5-MAXIMUM NON-REPETITIVE

FORWARD SURGE CURRENT

FIG.6-TYPICAL JUNCTION CAPACITANCE

175

150

125

100

TA=25 C

8.3ms SINGLE HALF SINE-WAVE

(JEDEC Method)

TJ=25 C

EGP10A-EGP10G

EGP10J-EGP10M

100

0.1

0.5

10 20

50 100

NUMBER OF CYCLES AT 60Hz

REVERSE VOLTAGE. (V)

8-5

NO.51 HEPING ROAD PR CHINA

TEL:86-531-6943657 FAX:86-531-6947096

WWW.JIFUSEMICON.COM

JINAN JINGHENG CO., LTD.

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